Abstract
In low-dimensional semiconductor systems, carrier doping can effectively tune the electronic band structure, leading to significant impacts on magnetic properties. In this study, we investigate the influence of hole doping on 2H VSe2 films by varying their thickness from bilayer to four-layer configurations. The pristine 2H VSe2 film exhibits layer-to-layer antiferromagnetic (AFM) state, but through hole carrier doping, we successfully switch this state to a ferromagnetic (FM) configuration. Notably, the critical hole carrier doping concentration is found to be thickness-dependent. For instance, in bilayer films, the critical hole doping concentration is approximately 1.25 × 1020/cm3, while in four-layer films, it increases to 6.75 × 1020/cm3. Furthermore, our investigations reveal the emergence of a half-metallic state due to hole doping in all systems. Although the critical temperature exhibits a consistent decrease with increasing layer thickness, remarkably high Curie temperatures are observed. Specifically, we calculate Curie temperatures of 600 K, 570 K, and 550 K for bilayer, trilayer, and four-layer films, respectively. In addition to these magnetic properties, we explore the optical characteristics of 2H VSe2 films. The four-layer film has a large refractive index of 3.2 near the blue light frequency. Moreover, the 2H VSe2 films exhibit optically transparent features in the visible frequency range. These results may indicate that the 2H VSe2 system can be utilized for potential optoelectronic devices based on magnetic materials.
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W. Liu, M. Liu, X. Liu, X. Wang, H. Deng, M. Lei, Z. Wei, Z. Wei, Recent advances of 2D materials in nonlinear photonics and fiber lasers. Adv. Optical Mater. 8, 1901631 (2020). https://doi.org/10.1002/adom.201901631
J. Cheng, C. Wang, X. Zou, L. Liao, Recent advances in optoelectronic devices based on 2D materials and their heterostructures. Adv. Opt. Mater. 7, 1800441 (2019). https://doi.org/10.1002/adom.201800441
Q. Wang, E.T.F. Rogers, B. Gholipour, C.-M. Wang, G. Yuan, J. Teng, N.I. Zheludev, Optically reconfigurable metasurfaces and photonic devices based on phase change materials. Nat. Photon. 10, 60–65 (2016). https://doi.org/10.1038/nphoton.2015.247
D. Akinwande, C. Huyghebaert, C.-H. Wang, M.I. Serna, S. Goossens, L.-J. Li, H.-S.P. Wong, F.H.L. Koppens, Graphene and two-dimensional materials for silicon technology. Nature 573, 507–518 (2019). https://doi.org/10.1038/s41586-019-1573-9
J.-U. Lee, S. Lee, J.H. Ryoo, S. Kang, T.Y. Kim, P. Kim, C.-H. Park, J.-G. Park, H. Cheong, Ising-type magnetic ordering in atomically thin FePS3. Nano Lett. Lett. 16, 7433–7438 (2016). https://doi.org/10.1021/acs.nanolett.6b03052
X. Wang, K. Du, Y.Y. Fredrik Liu, P. Hu, J. Zhang, Q. Zhang, M.H.S. Owen, X. Lu, C.K. Gan, P. Sengupta, C. Kloc, Q. Xiong, Raman spectroscopy of atomically thin two-dimensional magnetic iron phosphorus trisulfide (FePS3) crystals. 2D Mater. 3, 031009 (2016). https://doi.org/10.1088/2053-1583/3/3/031009
C. Gong, L. Li, Z. Li, H. Ji, A. Stern, Y. Xia, T. Cao, W. Bao, C. Wang, Y. Wang, Z.Q. Qiu, R.J. Cava, S.G. Louie, J. Xia, X. Zhang, Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals. Nature 546, 265–269 (2017). https://doi.org/10.1038/nature22060
B. Huang, G. Clark, E. Navarro-Moratalla, D.R. Klein, R. Cheng, K.L. Seyler, D. Zhong, E. Schmidgall, M.A. McGuire, D.H. Cobden, W. Yao, D. Xiao, P. Jarillo-Herrero, X. Xu, Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit. Nature 546, 270–273 (2017). https://doi.org/10.1038/nature22391
R. Roemer, C. Liu, K. Zou, Robust ferromagnetism in wafer-scale monolayer and multilayer Fe3GeTe2. NPJ 2D Mater. Appl. 4, 33 (2020). https://doi.org/10.1038/s41699-020-00167-z
X. Zhang, Q. Lu, W. Liu, W. Niu, J. Sun, J. Cook, M. Vaninger, P.F. Miceli, D.J. Singh, S.-W. Lian, T.-R. Chang, X. He, J. Du, L. He, R. Zhang, G. Bian, Y. Xu, Room-temperature intrinsic ferromagnetism in epitaxial CrTe2 ultrathin films. Nat. Commun. 12, 2492 (2021). https://doi.org/10.1038/s41467-021-22777-x
W. Yu, J. Li, T.S. Herng, Z. Wang, X. Zhao, X. Chi, W. Fu, I. Abdelwahab, J. Zhou, J. Dan, Z. Chen, Z. Chen, Z. Li, J. Lu, S.J. Pennycook, Y.P. Feng, J. Ding, K.P. Loh, Chemically exfoliated VSe2 monolayers with room-temperature ferromagnetism. Adv. Mater. 31, 1903779 (2019). https://doi.org/10.1002/adma.201903779
H. Yang, S.O. Valenzuela, M. Chshiev, S. Couet, B. Dieny, B. Dlubak, A. Fert, K. Garello, M. Jamet, D.-E. Jeong, K. Lee, T. Lee, M.-B. Martin, G.S. Kar, P. Sénéor, H.-J. Shin, S. Roche, Two-dimensional materials prospects for non-volatile spintronic memories. Nature 606, 663–673 (2022). https://doi.org/10.1038/s41586-022-04768-0
F. Xue, C. Zhang, Y. Ma, Y. Wen, X. He, B. Yu, X. Zhang, Integrated memory devices based on two-dimensional materials. Adv. Mater. (2022). https://doi.org/10.1002/adma.202201880
S. Yu, K. Eshun, H. Zhu, Q. Li, Novel two-dimensional mechano-electric generators and sensors based on transition metal dichalcogenides. Sci. Rep. 5, 12854 (2015). https://doi.org/10.1038/srep12854
S.A. Han, J. Lee, J. Lin, S.-W. Kim, J.H. Kim, Piezo/triboelectric nanogenerators based on 2-dimensional layered structure materials. Nano Energy 57, 680–691 (2019). https://doi.org/10.1016/j.nanoen.2018.12.081
X. Wang, D. Li, Z. Li, C. Wu, C.-M. Che, G. Chen, X. Cui, Ferromagnetism in 2D vanadium diselenide. ACS Nano 15, 16236–16241 (2021). https://doi.org/10.1021/acsnano.1c05232
A.H.M.A. Wasey, S. Chakrabarty, G.P. Das, Quantum size effects in layered VX 2 (X = S, Se) materials: manifestation of metal to semimetal or semiconductor transition. J. Appl. Phys. 117, 064313 (2015). https://doi.org/10.1063/1.4908114
M. Esters, R.G. Hennig, D.C. Johnson, Dynamic instabilities in strongly correlated VSe2 monolayers and bilayers. Phys. Rev. B 96, 235147 (2017). https://doi.org/10.1103/PhysRevB.96.235147
A. Li, W. Zhou, J. Pan, Q. Xia, M. Long, F. Ouyang, Coupling stacking orders with interlayer magnetism in bilayer H-VSe2 *. Chinese Phys. Lett. 37, 107101 (2020). https://doi.org/10.1088/0256-307X/37/10/107101
G.S. Ahmad, B. Marfoua, J. Hong, Odd-even alternating exchange coupling and optical properties of 2D 2H–VSe2 film. Physica E E (2022). https://doi.org/10.1016/j.physe.2022.115583
D. Wijethunge, L. Zhang, C. Tang, S. Sanvito, A. Du, Interfacing 2D VS2 with Janus MoSSe: antiferromagnetic electric polarization and charge transfer driven Half-metallicity. Appl. Surf. Sci. 570, 151129 (2021). https://doi.org/10.1016/j.apsusc.2021.151129
S.-J. Gong, C. Gong, Y.-Y. Sun, W.-Y. Tong, C.-G. Duan, J.-H. Chu, X. Zhang, Electrically induced 2D half-metallic antiferromagnets and spin field effect transistors. Proc. Natl. Acad. Sci. U.S.A. 115, 8511–8516 (2018). https://doi.org/10.1073/pnas.1715465115
G. Kresse, J. Furthmüller, Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci.. Mater. Sci. 6, 15–50 (1996). https://doi.org/10.1016/0927-0256(96)00008-0
H.J. Monkhorst, J.D. Pack, Special points for Brillouin-zone integrations. Phys. Rev. B 13, 5188–5192 (1976). https://doi.org/10.1103/PhysRevB.13.5188
P.E. Blöchl, Projector augmented-wave method. Phys. Rev. B 50, 17953–17979 (1994). https://doi.org/10.1103/PhysRevB.50.17953
J. Heyd, G.E. Scuseria, M. Ernzerhof, Hybrid functionals based on a screened Coulomb potential. J. Chem. Phys. 118, 8207–8215 (2003). https://doi.org/10.1063/1.1564060.Fe3GeTe2
J. Heyd, G.E. Scuseria, M. Ernzerhof, Erratum: “Hybrid functionals based on a screened Coulomb potential” [J. Chem. Phys. 118, 8207 (2003)]. J. Chem. Phys.Chem Phys. 124, 219906 (2006). https://doi.org/10.1063/1.2204597
R.F.L. Evans, W.J. Fan, P. Chureemart, T.A. Ostler, M.O.A. Ellis, R.W. Chantrell, Atomistic spin model simulations of magnetic nanomaterials. J. Phys. Condens. MatterCondens. Matter. 26, 103202 (2014). https://doi.org/10.1088/0953-8984/26/10/103202
R. Evans, VAMPIRE software package version 4.0, York, UK. URL https://vampire.york.ac.uk/. (2016).
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This work was supported by a research grant from Pukyong National University (2023).
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Ahmad, G.S., Hong, J. Hole induced half-metallic 2H VSe2 thin film with high Curie temperature and optical transparency. J. Korean Phys. Soc. 84, 462–469 (2024). https://doi.org/10.1007/s40042-024-01010-0
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DOI: https://doi.org/10.1007/s40042-024-01010-0