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Etchant-based chemical doping of large-area graphene and the optical characterization via terahertz time-domain spectroscopy

  • Original Paper - Atoms, Molecules and Optics
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Abstract

We investigate simple chemical doping process and the optical characterization of large-area graphene. The large-area graphene is grown on copper foil by chemical vapor deposition method, where carrier density is varied by exposure duration within FeCl3 solution after complete etching of copper. Using terahertz time-domain spectroscopy, we obtain terahertz conductivity with different exposure duration. We confirm that the longer exposure time, the higher conductivity, which results from p-type doping due to copper etchant. The result implies that varying etching time during transfer process enables distinguished Fermi levels in graphene sheet, essential for simple fabrication of doping-level-controlled graphene sample.

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The data that support the findings of this study are available from the corresponding author.

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Acknowledgements

This work was supported by the National Research of Korea Foundation (NRF) funded by the Ministry of Science and ICT (NRF-2021R1F1A1063680 and NRF-2022R1A2C1011655) and 2022 Research Grant from Kangwon National University, Republic of Korea.

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Correspondence to Sung Ju Hong, Gang Hee Han or Young-Mi Bahk.

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Kim, N., Jung, D., Kim, Y. et al. Etchant-based chemical doping of large-area graphene and the optical characterization via terahertz time-domain spectroscopy. J. Korean Phys. Soc. 82, 19–23 (2023). https://doi.org/10.1007/s40042-022-00680-y

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  • DOI: https://doi.org/10.1007/s40042-022-00680-y

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