Abstract
This paper discusses surface texturization of monocrystalline silicon wafer 〈100〉 by using a very simple and cost effective technique consisting of a combination of mechanical grinding and chemical etching, to achieve desired surface reflectance for solar cell applications. The abrasive used for mechanical grinding is aluminum oxide powder with different grain sizes. Potassium hydroxide–isopropyl alcohol solution (with different molar concentrations) is used as alkaline etchant. The change in surface reflectance may be correlated with the change in surface roughness parameters of silicon wafer after texturing. The roughness measurements are performed by using white light interferometry based three dimensional optical profiler. Reflectance measurements of texturized silicon wafer samples are carried out by ultra violet visible spectrophotometer. A comparative reflectance study of silicon wafer samples after using these methods reveals that the combination of mechanical grinding and alkaline etching is more effective for surface texture modification in terms of significantly reduced surface reflectance as compared to a single texturization technique. After reflectance data analysis of texturized samples, correlations have been established for percentage reflectance versus abrasive grain size and percentage reflectance versus molar concentration of etchant. These correlations provide a combination of abrasive grain size and etchant molar concentration to achieve desired value of percentage surface reflectance of silicon wafer from 23.97 to 11.85% at 800 nm wavelength, which is significant for solar cell applications.
Similar content being viewed by others
References
Lingen C, Shengbing Z, Fengrui S (2010) Constructal minimization of emitter grid resistance of solar cell with variable cross-section collectors. Indian J Pure Appl Phys 48:586–592
Xiao SQ, Xu S (2014) High-efficiency silicon solar cells-materials and devices physics. Crit Rev Solid State Mater Sci 39:277–317
Xiao SQ, Xu S, Ostrikov K (2014) Low-temperature plasma processing for Si photovoltaics. Mater Sci Eng R-Rep 78:1–29
Xiao SQ, Xu S, Zhou HP, Wei DY, Huang SY, Xu LX, Sern CC, Guo YN, Khan S (2012) Amorphous/crystalline silicon heterojunction solar cells via remote inductively coupled plasma processing. Appl Phys Lett 100:233902
Kuo Ch, Chen YR (2012) Rapid optical measurement of surface texturing result of crystalline silicon wafers for high efficiency solar cells application. Opt Int J Light Electron Opt 123:310–313
Yousong L, Guangbin J, Wang J, Liang X, Zewen Z, Yi S (2012) Fabrication and photo catalytic properties of silicon nanowires by metal-assisted alkaline etching: effect of H2O2 concentration. Nanoscale Res Lett 7:663
Androula GN, Violetta G, Charalambos K (2011) Si nanowires by a single-step metal-assisted alkaline etching process on lithographically defined areas: formation kinetics. Nanoscale Res Lett 6:597
Shinya K, Yasuyoshi K, Yuya W, Yasuharu Y, Yamada A, Yoshimi O, Yusuke N, Masaki H (2013) Optical assessment of silicon nanowire arrays fabricated by metal-assisted alkaline etching. Nanoscale Res Lett 8:216
Hylton JD, Burgers AR, Sinke WC (2004) Alkaline etching for reflectance reduction in multicrystalline silicon solar cells. J Electrochem Soc 151:G408–G427
Moona G, Kapruwan P, Sharma R, Ojha VN (2014) NCNRE 14, pp 590–592
Ryabova E (2009) A review of solar wafer cleaning and texturing methods. PV World Mag 1:12
Sethi C, Anand VK, Walia K, Sood SC (2012) Optimization of surface reflectance for alkaline textured monocrystalline silicon solar cell. TECHNIA Int J Comput Sci Commun Technol 5:785–788. ISSN: 0974-3375
Weiying O, Zhang Y, Hailing L, Zhao L, Chunlan Z, Hongwei D, Liu M, Weiming L, Zhang J, Wenjing W (2010) Texturization of mono-crystalline silicon solar cells in TMAH without the addition of surfactant. J Semicond 31(1–5):106002
Wijekoon K, Weidman T, Paak S, MacWilliams K (2010) Production ready novel texture etching process for fabrication of single crystalline silicon solar cell. Appl Mater IEEE. doi:10.1109/PVSC.2010.5614441
Dzhafarov T (2013) Silicon solar cells with nanoporous silicon layer. INTECH. doi:10.5772/51593
Sakoda T, Matsukuma K, Sung YM, Otsubo K, Tahara M, Nakashima Y (2005) Additional plasma surface texturing for single-crystalline silicon solar cells using dielectric barrier discharge. Jpn J Appl Phys 44:1730–1731
Chu AK, Wang JS, Tsai Y, Lee CK (2009) A simple and cost-effective approach for fabricating pyramids on crystalline silicon wafer. Sol Energy Mater Sol Cells 93:1276–1280
Nositschka WA, Beneking C, Voigt O, Kurz H (2003) Texturing of multicrystalline silicon wafers for solar cells by reactive ion etching through colloidal mask. Sol Energy Mater Sol Cells 76:155–166
Chen G, Kashkous I (2010) Effect of pre cleaning on texturization of c-Si wafers in a KOH/IPA mixture. J Electrochem Soc 25:3–10
King DL, Buck ME (1991) Experimental optimization of an anisotropic etching process for random texturisation of silicon solar cells. In: Proceedings of 22nd IEEE PVSC, p 308
Papet P, Nichiporuk O, Kaminski A, Rozier Y, Kraiem J, Lelievre JF, Chaumartin A, Fave A, Lemiti M (2006) Pyramidal texturing of silicon solar cell with TMAH chemical anisotropic etching. Sol Energy Mater Sol Cells 90:2319–2328
Seidel H, Csepregi L, Heuberger A, Baumgartel H (1990) Anisotropic etching of crystalline silicon in alkaline solutions: orientation dependence and behaviour of passivation layers. J Electrochem Soc 137:3612–3626
Fengxiang C, Isheng W (2011) Solar cells-silicon wafer based technologies. INTECH. doi:10.5772/20962
Brendel R (1994) Proceedings of 12th EUPVSC, Amsterdam, Netherlands (WIP, Munich), pp 1339–1342
Chand M, Mehta A, Sharma R, Ojha VN, Chaudhary KP (2011) Roughness measurement using optical profiler with self-reference laser and stylus instrument—a comparative study. Indian J Pure Appl Phys 49:335–339
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Moona, G., Kapruwan, P., Sharma, R. et al. Silicon Wafer Surface Reflectance Investigations by Using Different Surface Texturing Parameters. Proc. Natl. Acad. Sci., India, Sect. A Phys. Sci. 88, 617–623 (2018). https://doi.org/10.1007/s40010-017-0384-3
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s40010-017-0384-3