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Structural, Optical, and Electrical Characteristics of Cu3N with Respect to Substrate Temperature and N2 Concentration in Mixed Sputtering Gas

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Abstract

Cu3N films are investigated utilizing direct current magnetron sputtering from the Cu target in an Ar/N2 mixed sputtering gas. X-ray diffractive analysis, Ultra-violet absorption spectroscopy, X-ray dispersive spectroscopy, atomic force microscopy, field-emission scanning electron microscopy, Hall measurements, and I–V characteristic measurements are used to investigate the properties of the films. The study findings initially obtained films with a Cu3N composition at the appropriate substrate temperature of 80 °C. When the N2:(Ar + N2) gas ratio is more than 50%, the electrical property of films switches from n-type to p-type. The film obtains the greatest crystal quality and the best p-type electric property at the N2:(Ar + N2) gas ratio of 70%, with resistivity, hole concentration, and hole mobility of 1.18 × 10–2 Ωcm, 9.8 × 1019 cm−3, and 5.4 cm2V−1 s−1, respectively. A p–n Cu3N homojunction cell has an efficiency of 0.21%.

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Acknowledgements

This research is funded by University of Science, VNU-HCM under grant number T2023-08.

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  1. Faculty of Physics and Engineering Physics, VNUHCM-University of Science, Ho Chi Minh City, 700000, Vietnam

    Tran Le

  2. Vietnam National University Ho Chi Minh City, Ho Chi Minh City, 700000, Vietnam

    Tran Le

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Le, T. Structural, Optical, and Electrical Characteristics of Cu3N with Respect to Substrate Temperature and N2 Concentration in Mixed Sputtering Gas. Arab J Sci Eng (2024). https://doi.org/10.1007/s13369-023-08589-9

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