Abstract
The possibility of complete collecting eutectic Si and primary Si as purified Si during Al-Si solvent refining with Zr additions has been studied. From the ICP results, the B content in the eutectic Si is significantly higher than that in the primary Si with the low Zr addition (Zr addition ≤ 330 ppmw, Bmax=233 ppmw). With the excessive Zr addition, the B element in the melt is more and more distributed in the ZrB2 phase (over 95% with 3000 ppmw Zr addition), which causes the B content of primary Si and eutectic Si remained low level. Through the consistency of the estimated XZrB2 in this work with the theoretical value, the mechanism of the high-efficiency B removal is clearly revealed. The EDS analysis shows that the ZrSi2 phase is trapped and mixed in the collected Si crystal, which caused the Zr content in the Si crystal increasing abnormally, and the subsequent HCl + HF leaching process can effectively eliminate the trapped and mixed ZrSi2 phase in the Si phase. After leaching treatment, the B and Zr contents of eutectic Si and primary Si can reach the same level. This suggests that all Si crystals in Al-Si alloy can be used as purified Si, which greatly increases the recovery ratio of Si.
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The datasets used or analyzed during the current study are available from the corresponding author on reasonable request.
References
Solangi KH, Islam MR, Saidur R, Rahim NA, Fayaz H (2011) A review on global solar energy policy. Renew Sustain Energy Rev 15(4):2149
Li JW, Lin YH, Wang FM, Shi J, Sun JF, Ban BY, Liu GC, Chen J (2021) Progress in recovery and recycling of kerf loss silicon waste in photovoltaic industry. Sep Purif Technol 254(1):117581
Saidi M, Tabrizi HB, Grace JR (2019) A review on pulsed flow in gas-solid fluidized beds and spouted beds: Recent work and future outlook. Adv Powder Technol 30(6):1121
Chen WH, Liu RZ, Zeng QG, Zhou L (2019) Low cost multicrystalline bifacial PERC solar cells - Fabrication and thermal improvement. Sol Energy 184(15):508–514
Yu WZ, Ma WH, Lv GQ, Xue HY, Li SY, Dai YN (2014) Effect of electromagnetic stirring on the enrichment of primary silicon from Al-Si melt. J Cryst Growth 405(1):23
Li JW, Bai XL, Li YL, Ban BY, Chen J (2015) Effect of Ga addition on morphology and recovery of primary Si during Al-Si alloy solidification refining. High Temp Mater Processes (London) 34(8):833
Shi S, Li PT, Jiang DC, Tan Y, Li X, Yang JX, Zhang L, Wang F, Li JY, Asgha HM (2019) Kinetics of evaporation under vacuum in preparation of solar-grade silicon by electron beam melting. Mater Sci Semicond Process 96:53
Hu L, Wang Z, Gong XZ, Guo ZC, Zhang H (2013) Purification of metallurgical-grade silicon by Sn-Si refining system with calcium addition. Sep Purif Technol 18:699
Li YQ, Chen W, Lu J, Lei XH, Zhang LF (2021) Boron removal 565 from metallurgical-grade silicon by slag refining and gas blowing 566 techniques: experiments and simulations. J Electron Mater 50(3):1386-139
Li YQ, Tan Y, Li J, Morita K (2014) Si purity control and separation from Si-Al alloy melt with Zn addition. J Alloys Compd 611:267
Li YL, Chen J, Dai SY (2018) Study of the boron distribution and microstructure of solidified Al-Si alloy during the process of silicon purification. High Temp Mater Process 37(1):69
Zou QC, Jie JC, Liu SC, Sun XL, Li TJ, Wang TM, Yin GM (2017) Effect of Sn addition on the separation and purification of primary Si from solidification of Al-30Si melt under electromagnetic stirring. J Alloys Compd 725:1264
Ban BY, Li YL, Zuo QX, Zhang TT, Chen J, Dai SY (2015) Refining of metallurgical grade Si by solidification of Al-Si melt under electromagnetic stirring. J Mater Process Technol 222:142–147
Lei Y, Ma WH, Sun LE, Dai YN, Morita K (2016) B removal by Zr addition in electromagnetic solidification refinement of Si with Si-Al melt. Metall Mater Trans B 47:27
Lei Y, Ma WH, Wu JJ, Wei KX, Lv GQ, Li SY, Morita K (2018) Purification of metallurgical-grade silicon using Si-Sn alloy in presence of Hf, Zr, or Ti. Mater Sci Semicond Process 88:97
Bai XL, Ban BY, Li JW, Peng ZJ, Jian C (2018) Distribution behavior of B and P during Al-Si melt directional solidification with open-ended crucible. High Temp Mater Process (Lond) 37(3):201
Li YL, Chen J, Dai SY (2019) Impurity distribution after solidification of hypereutectic Al-Si melts and eutectic Al-Si melt. High Temp Mater Process (Lond) 38:389
Ren YS, Morita K (2020) Low-temperature process for the fabrication of low-boron content bulk Si from Si-Cu solution with Zr addition. ACS Sustain Chem Eng 8:6853
Zhang YK, Lei Y, Ma WH, Wang H, Hu YQ, Wei KX, Li SY (2020) Preparation of high-purity Ti-Si alloys by vacuum directional solidification. J Alloys Compd 832:153989
Bai XL, Ban BY, Li JW, Fu ZQ, Peng ZJ, Wang CB, Chen J (2017) Effect of Ti addition on B removal during silicon refining in Al-30%Si alloy directional solidification. Sep Purif Technol 174:345
Lei Y, Ma WH, Sun LE, Wu JJ, Morita K (2016) Effects of small amounts of transition metals on boron removal during electromagnetic solidification purification of silicon with Al-Si solvent. Sep Purif Technol 162:20
Hopkins RH, Rohatgi A (1986) Impurity effects in silicon for high efficiency solar cells. J Cryst Growth 75:67
Chen C, Ban BY, Sun JF, Li JW, Jiang XS, Shi J, Chen J (2020) Mechanism of boron removal of primary Si phases and morphology evolution of impurity phases during slow cooling solidification refining of Al-30wt.%Si alloy with Zr additions. J Alloys Compd 860:158517
Ban BY, Bai XL, Li JW, Li YL, Chen J, Dai SY (2015) The mechanism of P removal by solvent refining in Al-Si-P system. Metall Mater Transactions B 46:2430
Champion Y, Hagege S (1996) Experimental determination and symmetry related analysis of orientation relationships in heterophase interfaces: a case study in the Zr-B system. Acta Metall 44:4169
Kobayashi K, Shingu PH, Ozaki R (1975) Crystal growth of the primary silicon in an Al-16 wt % Si alloy. J Mater Sci 10:290
Monticelli C, Bellosi A, Dal M, Colle, (2004) Electrochemical behavior of ZrB2 in aqueous solutions. J Electrochem Soc 151:331
Yoshikawa T, Morita K (2009) Refining of silicon during its solidification from a Si-Al melt. J Cryst Growth 311:776
Kostov A, Zivkovic D, Friedrich B (2007) Thermodynamic predicting of Si-Me (Me = Ti, Al) binary systems. J Min Metall Sect B Metall 43(1):29
Kobayashi KF, Hogan LM (1985) The crystal growth of silicon in Al-Si alloys. J Mater Sci 20:1961
Chen J, Huang B (1999) Carbide formation process in directionally solidified MAR-M247 LC superalloy. J Mater Sci Technol 15:48
Chen J, Lee JH, Jo CY, Choe SJ, Lee YT (1998) MC carbide formation in directionally solidified MAR-M247 LC super alloy. Mater Sci Eng A 247:113
Gao T, Cui X, Li X, Li H, Liu X (2014) Morphological evolutions and growth patterns of Zr-containing phases in aluminum alloys. CrystEngComm 16:3548
Jiang W, Yu W, Qin H, Xue Y, Li C, Lv X (2019) Boron removal from silicon by hydrogen assistant during the electromagnetic directional solidification of Al-Si alloys. Int J Hydrog Energy 44:13502
Zhang C, Wei KX, Zhang DM, Ma WH, Dai YN (2017) Phosphorus removal from upgraded metallurgical-grade silicon by vacuum directional solidification. Vacuum 146:159
Jie JC, Zou QC, Sun JL, Lu YP, Wang TM, Li TJ (2014) Separation mechanism of the primary Si phase from the hypereutectic Al-Si alloy using a rotating magnetic field during solidification. Acta Mater 72:57
Acknowledgements
This work was financially supported by National Natural Science Foundation of China (No.51804294, No.51874272, and No.52111540265); Anhui Provincial Natural Science Foundation (No. 1808085ME121); Key Laboratory of Photovoltaic and Energy Conservation Materials, Chinese Academy of Science (PECL2021QN003); Hefei Institutes of Physical Science, Chinese Academy of Sciences Director’s Fund (YZJJZX202018); International Clean Energy Talent Program by China Scholarship Council.
Funding
This work was financially supported by National Natural Science Foundation of China (No.51804294, No.51874272, and No.52111540265); Anhui Provincial Natural Science Foundation (No. 1808085ME121); Key Laboratory of Photovoltaic and Energy Conservation Materials, Chinese Academy of Science (PECL2021QN003); Hefei Institutes of Physical Science, Chinese Academy of Sciences Director’s Fund (YZJJZX202018); International Clean Energy Talent Program by China Scholarship Council.
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Chen Chen: substantial contributions to the conception, design of the work, the acquisition, analysis, drafted the work or substantively revised it.
Boyuan Ban: substantial contributions to the conception, design of the work, the acquisition, analysis, drafted the work or substantively revised it.
Jingwei Li: design of the work, the acquisition, analysis.
Jian Chen: the acquisition, analysis, substantial contributions to the conception.
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Chen, C., Li, J., Chen, J. et al. Possibility of Complete Collecting Eutectic Si and Primary Si as Purified Si During Al-Si Solvent Refining with Zr Additions. Silicon 14, 11097–11108 (2022). https://doi.org/10.1007/s12633-022-01851-z
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DOI: https://doi.org/10.1007/s12633-022-01851-z