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FinFET-Based Inverter Design and Optimization at 7 Nm Technology Node

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Abstract

Stress engineering is one of the best techniques to enhance the potential of a device. In the first phase of this work, the impact of stress on the physical and electrical performance of FinFET based inverter is investigated using 2D and 1D stress mapping techniques. Electrons and holes mobility enhancements are presented in the sidewall fins of <100> and < 110> direction respectively, by resulting tensile stress in n-FinFET and compressive stress in p-FinFET. According to the sidewall orientation (<100 > or < 110>), the amount of mobility enhancement of both the electrons and holes are resulting in more than 100% (>100%) and less than 25% (<25%) respectively. In the second phase, Design Technique Co-Optimization (DTCO) method is approached in inverter standard cells generation to enable the VLSI digital system design flow based on standard cells using FinFET. FinFET-based inverters at 7 nm technology nodes is designed using the GTS TCAD framework. The optimal electrical characteristics such as current density, throughput delay, average power dissipation, and switching energy are presented with optimal design.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Siksha ‘O’ Anusandhan (Deemed to be University), Bhubaneswar, Odisha, 751030, India

    J. Jena, D. Jena, E. Mohapatra & T. P. Dash

  2. Department of ECE, Silicon Institute of Technology, Odisha, 751024, India

    S. Das

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Contributions

Conceptualization: Jhansirani Jena and Taraprasanna Dash; Methodology: Jhansirani Jena, Eleena Mohapatra; Formal analysis and investigation: Jhansirani Jena and Sanghamita Das; Writing - original draft preparation: Jhansirani Jena, Taraprasanna Dash,; Writing - review and editing: Eleena Mohapatra, Devika Jena,; Supervision: Taraprasanna Dash.

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Jena, J., Jena, D., Mohapatra, E. et al. FinFET-Based Inverter Design and Optimization at 7 Nm Technology Node. Silicon 14, 10781–10794 (2022). https://doi.org/10.1007/s12633-022-01812-6

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