Abstract
The channel modulated junctionless gate all around (CM-JL-GAA) MOSFET improves the SCE’s with high graded doping of the channel region. Temperature effects on electrostatic and analog/RF performance of channel modulated junctionless gate all around (CM-JL-GAA) MOSFETs have been explored in this work throughout a temperature range of 200 K to 500 K. The channel length, gate oxide thickness, and gate oxide material of CM-JL-GAA MOSFET has been varied to understand the impact of process parameters on device performance using Silvaco 3D device simulator. The electrostatic and analog/RF parameters have been figure out for the specified temperature range with process parameter variation. When the temperature of CM-JL-GAA MOSFETs is increased from 200 K to 500 K, the analog/RF performance is marginally affected. The intrinsic gain (AV) is negligibly affected (~3 dB) with raised in temperature. The adoption of a high-k gate dielectric improves electrostatic performance such as DIBL, SS and Ion/Ioff and marginal deterioration in the analog/RF performance of CM-JL-GAA MOSFETs, according to this study. With temperature changes, the high-k dielectric has a minor impact on the analog/RF performance of CM-JL-GAA MOSFETs. Hence, the CM-JL-GAA MOSFETs device have better analog/RF performance at higher temperature with high-frequency applications.
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Gupta, A., Gupta, V., Pandey, A.K. et al. A Novel Technique to Investigate the Impact of Temperature and Process Parameters on Electrostatic and Analog/RF Performance of Channel Modulated Junctionless Gate-all-around (CM-JL-GAA) MOSFET. Silicon 14, 10613–10622 (2022). https://doi.org/10.1007/s12633-022-01794-5
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DOI: https://doi.org/10.1007/s12633-022-01794-5