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Performance Analysis of Hetero Gate Oxide with Work Function Engineering Based SC-TFET with Impact of ITCs

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Abstract

This manuscript illustrates the effects of temperature (T) and Interface trap charges (ITCs) on proposed device (Hetero Gate Oxide-Dual Work function- Step Channel Tunnel Field Effect Transistor (HGO-DW-SC-TFET)). Some crucial device performance parameters, such as Vth, ION, IOFF, SS, ION/IOFF are improved when hetero gate oxide with dual work-function is implemented on HGO-DW-SC-TFET. Performance analysis of the proposed device has been done by examine the DC, Analog/Radio Frequency, and linearity figure of merits (FOMs) at various temperatures and ITCs, which are allocated at the insulator and semiconductor interface. OFF-State analysis of the HGO-DW-SC-TFET performed by considering various models like BTBT, SRH, and TAT, which significantly affect the device performance for T variation. To examine analog/RF performance of simulated devices, Gate-Drain Capacitance (Cgd), Gate-Source Capacitance (Cgs), Trans-conductance (gm1), Gain-Bandwidth -Product (GBP), Trans-conductance-Frequency-Product (TFP), Cutoff-Frequency (fT), Trans-conductance-Generation-Factor (TGF), Transit Time (TT) are analyzed with consideration of T and ITCs variations. Similarly, linearity FOMs of proposed device are investigated in terms of derivatives of trans-conductance (gm2, gm3), Voltage-Intercept-Points (V IP2, V IP3), Input-Intercept-Point (IIP3), and Inter-Modulation-Distortion (IMD3).

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Acknowledgements

The authors would like to thank Dr. Dip Prakash Samajdar from Department of Electronics and Communication Engineering, PDPM Indian Institute of Information Technology, Design & Manufacturing, Jabalpur, Madhya Pradesh, India for providing valuable suggestions and support to carry out this research work.

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  1. Electronics and Communication Engineering Department, National Institute of Technology Hamirpur, Himanchal Pradesh, 177005, India

    Dharmendra Singh Yadav & Manshi Kamal

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  1. Dharmendra Singh Yadav
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  2. Manshi Kamal
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Contributions

Manshi Kamal: Conceptualization, data curation, formal analysis, methodology, investigation, writing – original draft. Dharmendra Singh Yadav: Supervision, validation, visualization, writing – review & editing

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Correspondence to Dharmendra Singh Yadav.

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Yadav, D.S., Kamal, M. Performance Analysis of Hetero Gate Oxide with Work Function Engineering Based SC-TFET with Impact of ITCs. Silicon 14, 11429–11441 (2022). https://doi.org/10.1007/s12633-022-01792-7

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