Abstract
The conceptualization of biomolecule sensing accomplished by field effect transistor (FET) devices have been attracting substantial contemplation for over twenty years owing to the prospectus for ultra-high sensitivity sensing, labeling free operation, cost efficacious and possibility of miniaturization. To promote deeper backgrounds and future outlooks of biologically sensitive-FETs (BioFETs), we systematically present the extensive review of the related basic principles and technicalities from design, simulation , modeling and fabrication perspectives. The primal significance of sensing ions and molecules for point of care (POC) diagnostics has impelled the seek for ultra sensitive, specific, and robust sensors. Electronic detection exhibits the potential for miniaturized on-chip applications applications that have the possibility of being integrated into classical electronic manufacturing processes and technology. An in depth exploration of major sensing mechanisms and types of BioFETs such as ion sensitive field-effect transistor (ISFET), silicon nanowire (SiNW), organic FET (OFET), graphene FET, and compound semiconductor material based FET are discussed in this review article. BioFETs deliver sensing system that are miniaturized intrinsically suited for multiplexed and parallel detections applications. Herein we also provide the effect on figure of merits of biosensing systems from architectural perspectives of BioFETs. The underlying detection rationale governing every potentiometric sensor is also discussed in detail. Despite of the commercial application of BioFETs in pH sensing has been realized, yet their application for bio-molecular sensing at a commercial scale is obstructed by poor comprehension of how to optimize device design for enhanced figure of merits. In part, these hindrances root from the superior inter-disciplinary nature of the problem experienced in this field, where knowledge of bio-molecular binding kinetics, surface chemistry and electrical engineering is required at large. This article is an attempt to contemplate different aspects of BioFET design from various perspectives.
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Abbreviations
- \(\mathrm {pK}^{\prime }_{\mathrm {a, T}}\) :
-
Modified/practical \(\mathrm {pK}_{\mathrm {a}}\)
- pH:
-
Potential of hydrogen
- \(\xi _{\mathrm {a}}\) :
-
Charge on the conjugate acid species
- A(T):
-
Temperature dependent constant
- \(\lambda _{\mathrm {D}}\) :
-
Debye length
- SNR:
-
Signal to noise ratio
- \(\Delta \mathrm {V}_{\mathrm {T}}\) :
-
Change in threshold voltage
- \(\mathrm {pH}_{\mathrm {PZC}}\) :
-
Point of zero charge
- \(\beta\) :
-
Material constant for oxides
- \(\mathrm {V}_{\mathrm {T}}\) :
-
Thermal equivalent of Voltage
- \(\phi\) :
-
Potential at oxide-electrolyte interface
- \(\mathrm {K}_{\mathrm {w}}\) :
-
Dissociation constant of water
- \(k_{B}\) :
-
Boltzmann’s constant
- \(\varepsilon _{0}\) :
-
Permittivity in vacuum
- \(\mathrm {M}_{\mathrm {Eff}}\) :
-
Effective ion concentration of electrolyte
- K:
-
Dielectric Permittivity
- \(\mathrm {S}_{\mathrm {I}_{\mathrm {Ds}}}\) :
-
Drain Current Sensitivity
- \(\mathrm {C}_{\mathrm {eff,g}}\) :
-
Effective Gate Capacitance
- \(\mathrm {V}_{\mathrm {FB}}\) :
-
Flat-band Voltage
- \(\mathrm {V}_{\mathrm {T}}\) :
-
Thermal Equivalent of Voltage
- \(\beta\) :
-
Material Parameter for Oxides
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Shafi, N., Bhat, A.M., Parmar, J.S. et al. Biologically Sensitive FETs: Holistic Design Considerations from Simulation, Modeling and Fabrication Perspectives. Silicon 14, 9237–9261 (2022). https://doi.org/10.1007/s12633-022-01709-4
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DOI: https://doi.org/10.1007/s12633-022-01709-4