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Investigation of Electrical and Structural Properties of Ag/TiO2/n-InP/Au Schottky Diodes with Different Thickness TiO2 Interface

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Abstract

In this study, structural and electrical properties of Ag/TiO2/n-InP/Au Schottky barrier diodes, constructed with sputtering method on n-InP wafer, are investigated. Particle size, d- spacing, micro-strain, ideality factor and barrier heights of two samples are determined for two different interfacial TiO2 layer thickness. Thickness of TiO2 interfacial layers are adjusted as 60 Å and 120 Å. X-ray diffraction (XRD) and current-voltage (I-V) measurements are employed for mentioned parameters. It is seen that sample with 60 Å TiO2 interfacial layer is a more ideal diode. It is seen that as thickness of TiO2 interface decrease Ag/TiO2/n-InP Schottky diode becomes more ideal. This result is explained in main text in connection with series resistance, difference between d-spacings of interface and wafer. Comments on relation of lattice mismatch with series resistance are also made.

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Acknowledgements

This work was supported by Presidency Strategy and Budget Directorate (Grant Number: 2016K121220).

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Authors and Affiliations

  1. Physics Department, Gazi University, Teknikokullar, Ankara, 06550, Turkey

    Ahmet Kürşat Bilgili, Rabia Çağatay & Metin Özer

  2. Photonics Research and Application Center, Gazi University, Teknikokullar, Ankara, 06550, Turkey

    Mustafa Kemal Öztürk

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  1. Ahmet Kürşat Bilgili
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  2. Rabia Çağatay
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  3. Mustafa Kemal Öztürk
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  4. Metin Özer
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Ahmet Kürşat Bilgili (corresponding author), Rabia Çağatay (drawing plots), Mustafa Kemal Öztürk (calculations), Metin Özer (checking and editing).

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Correspondence to Ahmet Kürşat Bilgili.

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Bilgili, A.K., Çağatay, R., Öztürk, M.K. et al. Investigation of Electrical and Structural Properties of Ag/TiO2/n-InP/Au Schottky Diodes with Different Thickness TiO2 Interface. Silicon 14, 3013–3018 (2022). https://doi.org/10.1007/s12633-021-01093-5

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  • DOI: https://doi.org/10.1007/s12633-021-01093-5

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