Skip to main content
SpringerLink
Log in

Analog/RF and Power Performance Analysis of an Underlap DG AlGaN/GaN Based High-K Dielectric MOS-HEMT

  • Original Paper
  • Published:
Silicon Aims and scope Submit manuscript

Abstract

This paper exemplifies an exhaustive, figurative and subjective study on the RF performance and DC characteristics analysis of an Underlapped Double-Gate (U-DG) AlGaN/GaN heterojunction-based MOS-HEMT device with Hafnium-based high-k dielectric gate material. This paper depicts the effect of gate length variations on the drain current (ID), the transconductance (gm), the transconductance generation factor (gm/ID) and the RF FOMs intrinsic capacitances (CGD, CGS and CGG), intrinsic resistances (RGD and RGS), cut-off frequency (fT) and maximum oscillation frequency (fMAX). This study reveals shortening of channel length leading to better gate controllability hence an overall superior analog and RF performance is achieved. The U-DG AlGaN/GaN based MOS-HEMT device of 100 nm channel length shows a better Power Output Efficiency (POE) of 33% in contrast to 31% and 23% for the 200 nm and 300 nm devices respectively.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Availability of Data and Material

For this research work no supplementary data and material are required.

References

  1. Xie Q, Xu J, Taur Y (2012) Review and critique of analytic models of MOSFET short-channel effects in subthreshold. IEEE Trans Electron Devices 59(6):1569–1579

    Article  Google Scholar 

  2. Taur Y, Ning TH (2013) Fundamentals of modern VLSI devices, Cambridge university press

  3. Paul BC, Bansal A, Roy K (2006) Underlap DGMOS for digital-subthreshold operation. IEEE Trans Electron Devices 53(4):910–913

    Article  CAS  Google Scholar 

  4. Mishra UK, Shen L, Kazior TE, Wu Y-F (2008) GaN-based RF power devices and amplifiers. Proc IEEE 96(2):287–305

    Article  CAS  Google Scholar 

  5. Chen J, Luo Q, Huang J, He Q, Du X (2019) A complete switching analytical model of low-voltage eGaN HEMTs and its application in loss analysis. IEEE Trans Ind Electron 67(2):1615–1625

  6. Singh K, Kumar S, Goel E, Singh B, Dubey S, Jit S (2017) Effects of elevated source/drain and side spacer dielectric on the drivability optimization of non-abrupt ultra shallow junction gate underlap DG MOSFETs. J Electron Mater 46(1):520–526

    Article  CAS  Google Scholar 

  7. Gupta S, Nandi A (2019) Temperature analysis of underlap GAA-SNWTs for analog/RF applications. Microelectron J 90:58–62

    Article  CAS  Google Scholar 

  8. Roy A, Mitra R, Kundu A (2019) Influence of Channel Thickness on Analog and RF Performance Enhancement of an Underlap DG AlGaN/GaN based MOS-HEMT Device. In 2019 Devices for Integrated Circuit (DevIC), pp 186–190. IEEE. https://doi.org/10.1109/DEVIC.2019.8783865

  9. Fossum JG et al (2003) Physical insights on design and modeling of nanoscale FinFETs. Proc. IEEE Int. Electron Devices Meeting (IEDM) Tech. Dig. , Washington, DC, pp 29.1.1–29.1.4

  10. Kundu A, Dasgupta A, Das R, Chakraborty S, Dutta A, Sarkar CK (2016) Influence of Underlap on gate stack DG-MOSFET for analytical study of analog/RF performance. Superlattice Microst 94:60–73

    Article  CAS  Google Scholar 

  11. Khan AB, Anjum SG, Siddiqui MJ (2018) Effect of barrier layer thickness on AlGaN/GaN double gate MOS-HEMT device performance for high-frequency application. J Nanoelectron Optoelectron 13(1):20–26

    Article  CAS  Google Scholar 

  12. Jiang H, Tang CW, Lau KM (2018) enhancement-mode GaN MOS-HEMTs with recess-free barrier engineering and high-${k} $ ZrO2 gate dielectric. IEEE Electron Device Lett 39(3):405–408

    Article  CAS  Google Scholar 

  13. Nishitani T, Yamaguchi R, Asubar JT, Tokuda H, Kuzuhara M (2019) Improved on-state breakdown characteristics in AlGaN/GaN MOS-HEMTs with a gate field plate. In 2019 Compound Semiconductor Week (CSW), pp 1–2. IEEE. https://doi.org/10.1109/ICIPRM.2019.8819284

  14. Pardeshi H (2015) Analog/RF performance of AlInN/GaN Underlap DG MOSHEMT. Superlattice Microst 88:508–517. https://doi.org/10.1016/j.spmi.2015.10.009

    Article  CAS  Google Scholar 

  15. Efthymiou L, Longobardi G, Camuso G, Udrea F (2019) Bonding pad over active area layout for lateral AlGaN/GaN power HEMTs: a critical view. IEEE Trans Electron Devices 66(5):2301–2306

    Article  Google Scholar 

  16. Sarkar R, Bhunia S, Nag D, Barik BC, Gupta KD, Saha D, Ganguly S et al (2019) Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application. Appl Phys Lett 115(6):063502

    Article  Google Scholar 

  17. Zine-eddine T, Zahra H, Zitouni M (2019) Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications. J Sci: Advanced Mater Devices 4(1):180–187

    Google Scholar 

  18. Subramani NK (2017) Physics-based TCAD device simulations and measurements of GaN HEMT technology for RF power amplifier applications. PhD diss., University of Limoges

  19. Yan R, Khalsa G, Vishwanath S, Han Y, Wright J, Rouvimov S, Katzer DS et al (2018) GaN/NbN epitaxial semiconductor/superconductor heterostructures. Nature 555(7695):183–189

    Article  CAS  Google Scholar 

  20. Ambacher O, Smart J, Shealy JR, Weimann NG, Chu K, Murphy M, Schaff WJ, Eastman LF, Dimitrov R, Wittermer L, Stutzmann M, Rieger W, Hilsenbeck J (1999) Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures. J Appl Phys 85(6):3222–3233

    Article  CAS  Google Scholar 

  21. Herrera FA, Hirano Y, Iizuka T, Miura-Mattausch M, Kikuchihara H, Navarro D, Mattausch HJ, Ito A (2019) Compact Modeling for Leading-Edge Thin-Layer MOSFETs with Additional Applicability in Device optimization toward Suppressed Short-Channel Effects. In 2019 Electron Devices Technology and Manufacturing Conference (EDTM), pp 29–31. IEEE. https://doi.org/10.1109/EDTM.2019.8731246

  22. Smith JA, Takeuchi H, Stephenson R, Chen YA, Hytha M, Mears RJ, Datta S (2018) Experimental Investigation of N-Channel Oxygen-Inserted (OI) Silicon Channel MOSFETs with High-K/Metal Gate Stack. In 2018 76th Device Research Conference (DRC), pp 1–2. IEEE. https://doi.org/10.1109/DRC.2018.8442231

  23. International Technology Roadmap for Semiconductor (ITRS) (2008) edition

  24. Li S, Hu Q, Wang X, Wang M, Wu Y (2018) AlGaN/GaN E-mode MOS-HEMT Using Atomic-Layer-Deposited HfLaO x as Gate Dielectric. In 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), pp. 153–155. IEEE. https://doi.org/10.1109/WiPDAAsia.2018.8734558

  25. Wichmann N, Duszynski I, Wallart X, Bollaert S, Cappy A (2004) InAlAs-InGaAs double-gate HEMTs on transferred substrate. IEEE Electron Device Lett 25(6):354–356

    Article  CAS  Google Scholar 

  26. Wichmann N, Duszynski I, Wallart X, Bollaert S, Cappy A (2005) Fabrication and characterization of 100-nm In0.53Ga0.47As-In0.52Al0.48As double-gate HEMTs with two separate gate controls. Electron Device Lett IEEE 26(9):601–603

    Article  CAS  Google Scholar 

  27. Liu Y, Ishii K, Tsutsumi T et al (2003) Systematic electrical characteristics of ideal rectangular cross section Si-fin channel double-gate MOSFETs fabricated by a wet process. IEEE Trans Nanotechnol 2(4):198–204

    Article  Google Scholar 

  28. Sentaurus TCAD Manuals, Synopsys Inc., Mountain View, CA 94043, USA. Release C-2009.06

  29. Shockley JW, Read WT (1952) Statistics of the Recombinations of holes and electrons. Am Phys Soc 87(5):835–842

    CAS  Google Scholar 

  30. Subramani NK (2017) Physics-based TCAD device simulations and measurements of GaN HEMT technology for RF power amplifier applications. PhD diss., University of Limoges

  31. Canali RM, Ottaviani G (1975) Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature. IEEE Trans Electron Devices 22(11):1045–1047. https://doi.org/10.1109/T-ED.1975.18267

    Article  Google Scholar 

  32. Douara A, Djellouli B, Abid H, Rabehi A, Ziane A, Mostefaoui M, Toumi AB, Dif N (2019) Optimization of two-dimensional electron gas characteristics of AlGaN/GaN high electron mobility transistors. Int J Numerical Modell: Electron Networks Devices Fields 32(2):e2518

    Article  Google Scholar 

  33. Razavi (2002) Design of Analog CMOS Integrated Circuits. McGraw-Hill, New York

    Google Scholar 

  34. Sedra AS, Smith KC (2013) Microelectronic circuits: theory and applications. Oxford University Press

  35. Chern JGJ, Chang P, Motta RF, Godinho N (1980) A new method to determine MOSFET channel length. IEEE Electron Device Lett 1(9):170–173

    Article  Google Scholar 

  36. Khoie R (1998) A study of transconductance degradation in HEMT using a self-consistent Boltzmann-Poisson-Schrodinger solver. VLSI Design 6(1–4):73–77

    Article  Google Scholar 

  37. Kizilyalli IC, Artaki M, Shah NJ, Chandra A (1993) Scaling properties and short-channel effects in submicrometer AlGaAs/GaAs MODFET's: a Monte Carlo study. IEEE Trans Electron Devices 40(2):234–249

    Article  Google Scholar 

  38. Koley K, Dutta A, Syamal B, Saha SK, Sarkar CK (2013) Subthreshold analog/RF performance enhancement of underlap DG FETs with high-k spacer for low power applications. IEEE Trans Electron Devices 60(1):63–69

    Article  Google Scholar 

  39. Li T, Liu Z, eds (2017) Outlook and Challenges of Nano Devices, Sensors, and MEMS. Springer

  40. Mondal A, Roy A, Mitra R, Kundu A (2020) Comparative study of variations in gate oxide material of a novel Underlap DG MOS-HEMT for analog/RF and high power applications. Silicon 12(9):2251–2257

    Article  CAS  Google Scholar 

Download references

Acknowledgments

The authors would like to thank the IEEE EDS Center of Excellence, Heritage Institute of Technology for providing laboratory facilities.

Funding

Any form of funding, grants, or in-kind support in support was not received by the authors of the manuscript.

Author information

Authors and Affiliations

  1. Viterbi School of Engineering, University of Southern California, Los Angeles, USA

    Akash Roy

  2. TATA Consultancy Services Limited, Mumbai, India

    Rajrup Mitra

  3. Polytechnic University of Milan, Milan, Italy

    Arnab Mondal

  4. Electronics and Communication Engineering, Heritage Institute of Technology, Kolkata, India

    Atanu Kundu

Authors
  1. Akash Roy
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Rajrup Mitra
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Arnab Mondal
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Atanu Kundu
    View author publications

    You can also search for this author in PubMed Google Scholar

Contributions

Author 1 (Akash Roy): Conceived and performed the RF analysis, contributed to data and analysis tools, and wrote the paper.

Author 2 (Rajrup Mitra): Conceived and performed the analog analysis, calibrated the results, and wrote the paper.

Author 3 (Arnab Mondal): Conceived and performed the power analysis, experimental data analysis and edited the paper.

Author 4 (Atanu Kundu): Conceptualization, review, editing and supervision.

Corresponding author

Correspondence to Akash Roy.

Ethics declarations

Ethical Approval

All procedures performed in studies involving human participants were in accordance with the ethical standards of the institutional and/or national research committee and with the 1964 Helsinki declaration and its later amendments or comparable ethical standards.

Informed Consent

Informed consent was obtained from all individual participants included in the study.

Consent to Participate

The authors give full consent to participate in this research work.

Consent for Publication

The authors give full consent for publication of this research work.

Conflict of Interest

The authors of this manuscript certify that they have NO affiliations with or involvement in any organization or entity with any financial interest (such as honoraria; educational grants; participation in speakers’ bureaus; membership, employment, consultancies, stock ownership, or other equity interest; and expert testimony or patent-licensing arrangements), or non-financial interest (such as personal or professional relationships, affiliations, knowledge or beliefs) in the subject matter or materials discussed in this manuscript.

Additional information

Publisher’s Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Roy, A., Mitra, R., Mondal, A. et al. Analog/RF and Power Performance Analysis of an Underlap DG AlGaN/GaN Based High-K Dielectric MOS-HEMT. Silicon 14, 2211–2218 (2022). https://doi.org/10.1007/s12633-021-01020-8

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s12633-021-01020-8

Keywords

Search

Navigation