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Role of Process Parameters on Microstructural and Electronic Properties of Rapid Thermally Grown MoS2 Thin Films on Silicon Substrates

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Abstract

Miniaturization of the semiconducting materials propelled the discovery of low dimensional transition metal dichalcogenides (TMDC) thin films. In this work, MoS2 thin films have been grown by adopting rapid thermal processing (RTP) technique using hydrogen as a reducing gas. The effect of growth time and temperature on the morphological, microstructural and electronic properties of MoS2 thin film has been systematically investigated. Field emission scanning electron microscope (FESEM) images have shown the modulation of film morphology with both processing temperature and its duration. The intensity of (002) peak is found to be increased with RTP time and temperature. The improvement of crystallinity of MoS2 films with the increase in time and temperature has also been revealed from the decrease in the FWHM values of characteristic Raman peaks, which appeared around 389 cm−1 and 408 cm−1. The film quality is found to be deteriorated for the higher growth temperature. The carrier concentration of the MoS2 films is calculated by Mott-Schottky method, for MoS2/Si heterojunction. The carrier concentration, ideality factor and built-in potential are found to be 3.85 × 1015 cm−3, 1.45 and 0.46 V, respectively for MoS2 films grown at 800 °C for 5 min.

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Acknowledgments

This work was supported by Defence Research & Development Organisation (DRDO), India sponsored Extramural Research & Intellectual Property Rights (ERIP) project (ERIP/ERJ201701014/M/0 l/1748).

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  1. Department of Physics and Astronomy, National Institute of Technology, Rourkela, 769008, India

    Diana Pradhan & Jyoti P. Kar

  2. Centre for Nanomaterials, National Institute of Technology, Rourkela, 769008, India

    Jyoti P. Kar

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Pradhan, D., Kar, J.P. Role of Process Parameters on Microstructural and Electronic Properties of Rapid Thermally Grown MoS2 Thin Films on Silicon Substrates. Silicon 14, 1947–1957 (2022). https://doi.org/10.1007/s12633-021-00959-y

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