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Control of Melt Flow and Oxygen Distribution Using Traveling Magnetic Field during Directional Solidification of Silicon Ingots

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Abstract

Traveling magnetic field (TMF) is a potential method to control the melt flow and impurity transport during the directional solidification (DS) of silicon ingots. We numerically study the control mechanism of a downward and an upward TMF with different frequencies on the silicon melt flow and oxygen distribution in the DS process. Model experiment of generation and measurement of a TMF is first carried out to validate the magnetic field computing program. Then, the TMF frequency is varied to study its influence on the direction and magnitude of Lorentz force, pattern and intensity of silicon melt flow, and distribution of oxygen impurity. Results show that the downward TMF with large frequency can induce local melt flow above the melt-crystal interface and block the oxygen transport from the dominant flow to the interface. The upward TMF with small frequency and large amplitude can induce thoroughly upward melt flow along the crucible side wall and take the oxygen far away from the melt-crystal interface, which is better for reducing the oxygen content in the silicon melt and ingots.

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Acknowledgments

This research was supported by the National Natural Science Foundation of China (Grant Nos. 51406156, 51606135), and Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2016JQ5005).

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Authors and Affiliations

  1. School of Energy and Power Engineering, Xi’an Jiaotong University, Xi′an, 710049, Shaanxi, China

    Yue Shao, Zaoyang Li & Lijun Liu

  2. Birmingham Centre for Energy Storage, School of Chemical Engineering, University of Birmingham, Birmingham, B15 2TT, UK

    Qinghua Yu

  3. School of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, Hubei, China

    Qinghua Yu

Authors
  1. Yue Shao
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  2. Zaoyang Li
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  3. Qinghua Yu
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  4. Lijun Liu
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Correspondence to Zaoyang Li or Lijun Liu.

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Shao, Y., Li, Z., Yu, Q. et al. Control of Melt Flow and Oxygen Distribution Using Traveling Magnetic Field during Directional Solidification of Silicon Ingots. Silicon 12, 2395–2404 (2020). https://doi.org/10.1007/s12633-019-00339-7

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  • DOI: https://doi.org/10.1007/s12633-019-00339-7

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