Skip to main content
SpringerLink
Log in

Study of Undoped and Indium Doped ZnO Thin Films Deposited by Sol Gel Method

  • Original Paper
  • Published:
Silicon Aims and scope Submit manuscript

Abstract

In this paper, we report the effects of Indium doping concentrations (from 0 to 10wt%) on the structural, morphological, and optical properties of deposited In doped ZnO (IZO) thin films prepared by the sol–gel method through the dip coating technique. X-ray diffraction (XRD) analysis indicates that all ZnO thin films have a polycrystalline nature with a hexagonal wurtzite phase with (002) as a preferential orientation. XRD results demonstrate that the particle size of ZnO decreased with the increase in Indium concentrations. Raman scattering spectra confirmed the wurtzite phase and the presence of intrinsic defects in our samples. Energy dispersive spectroscopy (EDS) and the X-ray photoelectron spectroscopy (XPS) measurements, confirmed the presence of zinc, oxygen and indium elements which is in agreement with XPS results. The photoluminescence (PL) spectra of the films exhibit defects-related visible emission peaks, with intensities differing owing to different concentrations of zinc vacancies. UV–Vis spectrometer measurements show that all the films are highly transparent in the visible wavelength region (≥ 70%) and presented two different absorption edges at about 3.21 eV and 3.7 eV, these may be correspond to the band gap of zinc oxide and indium oxide respectively.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Benramache S, Benhaoua B (2012) Superlattices Microstruct 52:807–815

    Article  CAS  Google Scholar 

  2. Khomchenko VS, Kryshtab TG, Savin AK, Zavyalova LV, Roshchina NN, Rodionov VE, Lytvyn OS, Kushnirenko VI, Khachatryan VB, Adame JAA (2007) Superlattices Microstruct 42:94–98

    Article  CAS  Google Scholar 

  3. Venkatachalam S, Iida Y, Kanno Y (2008) Superlattices Microstruct 44:127–135

    Article  CAS  Google Scholar 

  4. Rahmane S, Djouadi MA, Aida MS, Barreau N, Abdallah B (2010) Thin Solid Film 519:5–10

    Article  CAS  Google Scholar 

  5. Park SM, Ikegami T, Ebihara K (2005) Jpn J Appl Phys 44:8027–8031

    Article  CAS  Google Scholar 

  6. Ciobanu G, Carja G, Apostolescu G, Taraboanta I (2006) Superlattices Microstruct 39:328–333

    Article  CAS  Google Scholar 

  7. Chia CH, Makino T, Tamura K, Segawa Y, Kawasaki M, Ohtomo A, Koinuma H (2003) Appl Phys Lett 82:1848–1850

    Article  CAS  Google Scholar 

  8. Xu H, Liu Y, Mu R, Shao C, Lu Y, Shen D (2005) Appl Phys Lett 86:123–107

    Google Scholar 

  9. Yamada T, Nebiki T, Kishimoto S, Makino H, Awai K, Narusawa T, Yamamoto T (2007) Superlattices Microstruct 42:68–73

    Article  CAS  Google Scholar 

  10. Duclère JR, Novotny M, Meaney A, O’Haire R, Mc Glynn E, Henry MO, Mosnier PJ (2005) Superlattices Microstruct 38:397–405

    Article  Google Scholar 

  11. Benzaouk H, Drici A, Mekhnache M, Amara A, Guerione M, bernède JC, Bendjffal H (2012) Superlattices Microstruct 52:594–604

    Article  Google Scholar 

  12. Ma J, Ji F, Ma HI, Li SY (1995) J Vac Sci Technol A13:92–94

    Article  Google Scholar 

  13. Gu XQ, Zhu LP, Cao L, Ye ZZ, He HP, Chu PK (2011) Mater Sci Semicond Process 14:48–51

    Article  CAS  Google Scholar 

  14. Teehan S, fstathiadis H, Haldar P (2011) J Alloys Compd 509:1094–1098

    Article  CAS  Google Scholar 

  15. Kim D, Yun I, Kim H (2010) Curr Appl Phys 10:459–462

    Article  Google Scholar 

  16. Park J, Lee C, Kim I, Jang S, Lee B (2009) Thin Solid Films 517:4432–4435

    Article  CAS  Google Scholar 

  17. Sharma M, Mehra RM (2010) Thin Solid Films 518:3725– 3730

    Article  CAS  Google Scholar 

  18. Wang DY, Zhou J, Liu GZ (2009) J Alloys Compd 481:802– 805

    Article  CAS  Google Scholar 

  19. Luna-Arredondo EJ, Maldonado A, Asomoza R, Acosta DR, Melendez-Lira MA, de la L. Olvera M (2005) Thin Solid Films 490:132–136

    Article  CAS  Google Scholar 

  20. Zi-qiang X, Hong D, Yan L, Hang C (2006) Mater Sci Semiconduct Process 9:132–135

    Article  Google Scholar 

  21. Caglar Y, Ilican S, Caglar M, Yakuphanoglu F (2007) Spectrochim Acta A 67:1113–1119. https://doi.org/10.1088/0953-8984/23/33/334214

    Article  Google Scholar 

  22. Calleja JM, Cardona M (1977) Phys. Rev. B 16:3753. https://doi.org/10.1103/PhysRevB.16.3753

    Article  CAS  Google Scholar 

  23. Umar A, Kim SH, Lee H, Lee N, Hahn YB (2008) J. Phys D: Appl Phys 41:065412. https://doi.org/10.1088/0022-3727/41/6/065412

    Article  Google Scholar 

  24. Fauteux C, Longtin R, Pegna J, Therriault D (2007) Inorg Chem 46:11036–11047

    Article  CAS  Google Scholar 

  25. Wagner CD, Riggs WM, Davis LE, Moulder JF (1979) Handbook of X-ray Photoelectron Spectroscopy. Perkin Elmer, Eden Prairie, MN

    Google Scholar 

  26. Barick KC, Aslam M, Wu J, Dravid VP, Bahadur D (2009) J Mater Res 24:3543–3550

    Article  CAS  Google Scholar 

  27. Seo SJ, Jeon JH, Hwang YH, Bae BS (2011) Appl Phys Lett 99:152102. https://doi.org/10.1063/1.3646388

    Article  Google Scholar 

  28. Ku CJ, Duan ZQ, Reyes PI, Lu YC, Xu Y, Hsueh CL, Garfunkel E (2011) Appl Phys Lett 98:123511. https://doi.org/10.1063/1.3567533

    Article  Google Scholar 

  29. King PDC, Veal TD, Phys J (2011) Condens Matter 23:334214

    Article  CAS  Google Scholar 

  30. Kaul AR, Gorbenko OY, Botev AN, Burova LI (2005) Superlattice Microstruct. 38:272

    Article  CAS  Google Scholar 

  31. Zhang SB, Wei SH, Zunger A (2001) Phys. Rev. B 63:075205. https://doi.org/10.1103/PhysRevB.63.075205

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Université Abbas Laghrour Khanchela, El Hamma, Khenchela, Algeria

    M. Medjaldi

  2. Laboratoire de Cristallographie, Université frères Mentouri Constantine, Constantine, Algeria

    O. Touil, B. Boudine, O. Halimi & M. Sebais

  3. Laboratoire des composants actifs et matériaux Université Larbi Ben M’hidi Oum El Bouaghi, El Bouaghi, Algeria

    M. Medjaldi & M. Zaabat

  4. Izmir Institute of Technology, TR-35430, Izmir, Turkey

    L. Ozyuzer

Authors
  1. M. Medjaldi
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. O. Touil
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. B. Boudine
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M. Zaabat
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. O. Halimi
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. M. Sebais
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. L. Ozyuzer
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to M. Medjaldi.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Medjaldi, M., Touil, O., Boudine, B. et al. Study of Undoped and Indium Doped ZnO Thin Films Deposited by Sol Gel Method. Silicon 10, 2577–2584 (2018). https://doi.org/10.1007/s12633-018-9793-4

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s12633-018-9793-4

Keywords

Search

Navigation