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Anisotropy of two-dimensional ReS2 and advances in its device application

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Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted growing interest regarding their potential applications in next-generation electronic and optoelectronic devices. Owing to their atomic thickness and tunable bandgap, they exhibit unique mechanical, electrical, and optical properties. As a specific member of the TMDC family, rhenium disulfide (ReS2) has stimulated intensive interest due to its anisotropic crystal structure, weak inter-layer coupling, and anisotropic electrical and optical properties. In this review, we summarize the distinct crystal structure and intrinsic anisotropic properties of ReS2, followed by an introduction to its synthesis methods. The current applications of ReS2 and its heterojunctions are presented based on its anisotropic properties. This review not only provides a timely summary of the current applications of ReS2 and its heterojunctions, but also inspires new approaches to develop other innovative devices based on 2D materials with a low lattice symmetry.

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摘要

二维过渡金属硫族化合物(TMDCs)因其在下一代电子器件和光电器件中的潜在应用引起了人们越来越多的关注。二维TMDCs材料具有原子级厚度、红外及可见光范围内的可调带隙, 表现出独特的机械、电学和光学特性。作为TMDCs家族中的一员, 二硫化铼(ReS2)由于其各向异性的晶体结构、弱层间耦合作用, 以及各向异性的电学和光学特性, 引起了人们的高度关注。本文综述了ReS2各向异性晶体结构和本征物理性质, 介绍了其主要的合成方法。并基于ReS2的各向异性特性, 概述了ReS2及其异质结在电子器件、光电器件、逻辑器件和储能器件方面的应用。本综述不仅总结了ReS2及其异质结器件研究现状, 也为设计研制基于低晶格对称性二维材料的新型器件提供了新思路。

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Fig. 1
Fig. 2

Copyright 2018 WILEY–VCH Verlag GmbH & Co. KGaA, Weinheim

Fig. 3

Copyright 2014 Nature Publishing Group, a division of Macmillan Publishers Limited

Fig. 4

Copyright Clearance Center, Inc. d Configuration of angle-resolved polarization Raman measurement and (inset) top view of crystal structure of ReS2; e Raman spectra of ReS2 at different rotation angles under a laser of 514.5 nm. Reprinted with permission from Ref. [58]. Copyright 2017 American Chemical Society. f Angle-resolved Raman intensities for mode III and V of 4L ReS2 shown in a polar plot. Reprinted with permission from Ref. [59]. Copyright 2015 American Chemical Society

Fig. 5

Copyright 2017 WILEY–VCH Verlag GmbH & Co. KGaA, Weinheim

Fig. 6

Copyright 2016 WILEY–VCH Verlag GmbH & Co. KGaA, Weinheim

Fig. 7

Copyright 2015 Natural Publishing Group

Fig. 8

Copyright 2016 WILEY–VCH Verlag GmbH & Co. KGaA, Weinheim

Fig. 9

Copyright 2019 American Chemical Society. d Schematic illustration of vertical BP/ReS2 heterojunction device; e current rectification ratio as a function of back-gate voltage (Vg) and (inset) diode ideal factor as a function of Vg under a forward bias (factor of 1.0 indicates a good interface quality in BP/ReS2 heterojunction); f photoresponsivity as a function of back-gate voltage with increased LBP values under an illuminated power density of 0.55 mW·cm−2. Reprinted with permission from Ref. [90]. Copyright Clearance Center, Inc. g Schematic of lateral ReS2/ReSe2 heterojunction device using linearly polarized light as excitation source; h transfer curves (Ids–Vg) of individual ReSe2 and ReS2 domain in FETs and (inset) Ids–Vds curves for individual ReSe2 and ReS2 domain; i transport curves (Ids–Vds) of ReS2/ReSe2 heterojunction device with various polarization angles (λ = 532 nm; power: 50 nW), where light polarization directions relative to b-axis of heterojunction (as indicated by blue dashed arrow in inset) are 0°, 45° and 90°, respectively, and inset shows an optical image of heterojunction device. Reprinted with permission from Ref. [92]. Copyright 2018 WILEY–VCH Verlag GmbH & Co. KGaA, Weinheim

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Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Nos. 11974041 and 12034002) and the Fundamental Research Funds for the Central Universities (No. FRF-IDRY-19-007).

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Authors and Affiliations

  1. Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, China

    Ya-Di Cao, Ying-Hui Sun & Rong-Ming Wang

  2. Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA

    Su-Fei Shi

  3. Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA

    Su-Fei Shi

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  1. Ya-Di Cao
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  2. Ying-Hui Sun
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Correspondence to Ying-Hui Sun or Rong-Ming Wang.

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Cao, YD., Sun, YH., Shi, SF. et al. Anisotropy of two-dimensional ReS2 and advances in its device application. Rare Met. 40, 3357–3374 (2021). https://doi.org/10.1007/s12598-021-01781-6

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  • DOI: https://doi.org/10.1007/s12598-021-01781-6

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