Abstract
The paper reviewed the previous microgravity experiment using Chinese recovery satellite, the in-situ measurement of composition profile in the solution by X-ray penetration method and homogeneous growth of InGaSb by temperature freezing method under terrestrial condition for making clear the effect of gravity on the growth of InGaSb ternary alloy semiconductor crystals. The previous experimental results showed that the shape of solid/liquid interfaces and composition profile in the solution were significantly affected by gravity. Based on the previous microgravity experimental results, experimental conditions were investigated to grow homogeneous In xGa 1−xSb with higher indium composition at Chinese recovery satellite SJ-10 in near future.
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Croll, A., Müller, W., Nitsche, R.: Floating zone growth of surface coated silicon under microgravity. J. Crystal Growth 79, 65 (1986)
Danilewsky, A.N., Benz, K.W., Nishinaga, T.: Growth Kinetics in Space- and Eearth-grown InP and GaSb Crystals. J. Crystal Growth 99, 1282 (1990)
Duffar, T., Pret-harter, I., Dusserre, P.: Crucible de-wetting during Bridgman Growth of Semiconductors in Microgravity. J. Crystal Growth 100, 171 (1990)
Duffar, T., Serrano, M.D., Moore, C.D., Camassel, J., Contreras, S., Dusserre, P., Rivoallant, A., Tanner, B.K.: Bridgman Solidification of GaSb in Space. J. Crystal Growth 192, 63 (1998)
Eyer, A., Leiste, H., Nitsche, R.: Floating zone growth of silicon under microgravity in a sounding rocket. J. Crystal Growth 71, 173 (1985)
Eyer, A., Leiste, H.: Striation free silicon crystals by float zoning with surface coated melt. J. Crystal Growth 71, 249 (1985)
Hayakawa, Y., Balakrishnan, K., Komatsu, H., Murakami, N., Nakamura, T., Koyama, T., Ozawa, T., Okano, Y., Miyazawa, M., Dost, S., Dao, L.H., Kumagawa, M.: Microravity experiments on melting and crystallization of InGaSb. Acta Astronautica 51, 221 (2002)
Hayakawa, Y., Okano, Y., Hirata, A., Imaishi, N, Kumagiri, Y., Zhong, X., Xie, X., Yuan, B., Wu, F., Liu, H., Yamaguchi, T., Kumagawa, M.: Experimental and Numerical Investigations on Dissolution and Recrystallization Processes of GaSb/InSb/GaSb under Microgravity and Terrestrial Conditions. J. Crystal Growth 213, 40 (2000)
Hayakawa, Y., Hikida, T., Morii, H., Konno, A., Chen, C., Arafune, K., Kawai, H., Koyama, T., Momose, Y., Ozawa, T., Aoki, T.: In-Situ Observation of Composition Profiles in the Solution by X-ray Penetration Method. J. Crystal Growth 310, 1487 (2008)
Hayakawa, Y., Balakrishnan, K., Arafune, K., Ozawa, T., Okano, Y., Hirata, A., Kumagawa, M. Microgravity Experiments on Dissolution and Crystallization of InGaSb, in Studies on Crystal Growth under Microgravity. In: Hayakawa, Y., Furukawa, Y. (eds.) , pp 1–50. Transworld Research Network (2005)
Hirata, A., Okitsu, K., Hayakawa, Y., Okano, Y., Sakai, S., Fujiwara, S., Imaishi, N., Yamaguchi, Y., Yoda, S., Oida, T., Kumagawa, M.: Effects of Gravity on the Mixing of In-Sb Melt. Int. J. Appl. Electromagn. Mech. 10, 527 (1999)
Inatomi, Y., Sakata, K., Arivanandhan, M., Rajesh, G., Nirmal Kumar, V., Koyoma, T., Momose, Y., Ozawa, T., Okano, Y., Hayakawa, Y.: npj Microgravity 1, 15011 (2015)
Kim, K.M.: Morphological Instability under Constitutional Supercooling during the Crystal Growth of InSb from the Melt under Stabilizing Thermal Gradient. J. Crystal Growth 44, 403 (1978)
Kimura, T., Arafune, K., Balakrishnan, K., Ozawa, T., Okano, Y., Murakami, N., Adachi, H., Hayakawa, Y., Kumagawa, M.: Numerical Analysis of the Dissolution Process of GaSb into InSb Melt under Difference Gravity Conditions. J. Crystal Growth 247, 291 (2003)
Kinosita, K., Arai, Y., Inatomi, Y., Tsukada, T., Adachi, S., Miyata, H., Tanaka, R., Yoshikawa, J., Kihara, T., Tomioka, H., Shibayama, H., Kubota, Y., Warashina, Y., Sasaki, Y., Ishizuka, Y., Harada, Y., Wada, S., Harada, C., Ito, T., Takayanagi, M., Yoda, S., Yamada T.: Growth of a Si 0.50Ge 0.50 Crystal by the Traveling Liquidus-zone (TLZ) Method in Microgravity. J. Crystal Growth 388, 23 (2014)
Kinosita, K., Yamada, T.: Pb 1−xSn xTe Crystal Growth in Space. J. Crystal Growth 147, 91 (1995)
Kinosita, K., Yamada, T.: Spherical Crystals of Pb 1−xSn xTe Grown in Microgravity. J. Crystal Growth 165, 75 (1996)
Lendvay, E., Harsy, M., Gorog, T., Gyuro, I., Pozsgai, I., Koltai, F., Gyulai, J., Lohner, T., Mezey, G., Kotai, E., Paszti, F., Hrjapov, V.T., Kultchisky, N.A., Regel, L.L.: The growth of GaSb under microgravity conditions. J. Crystal Growth 71, 538 (1985)
Mullines, W.W., Sekerka, R.F.: Morphological Stability of a Particle Growing by Diffsuion or Heat Flow. J. Appl. Phys. 34, 323 (1963)
Murakami, N., Arafune, K., Koyama, T., Kumagawa, M., Hayakawa, Y.: Effect of Gravitational Direction on Dissolution and Growth in GaSb/InSb/GaSb Sandwich System. J.Crystal Growth 263, 320 (2004)
Murakami, N., Arafune, K., Koyama, T., Kumagawa, M., Hayakawa, Y.: Measurement of Growth Rate by Thermal Pulse Technique and Growth of Homogeneous In xGa 1−xSb Bulk Crystals. J. Crystal Growth 275, 433 (2005)
Murakami, N., Hikida, T., Konno, A., Arafune, K., Koyama, T., Momose, Y., Ozawa, T., Miyazawa, M., Kumagawa, M., Hayakawa, Y.: Growth of Homogeneous InGaSb Ternary Alloy Semiconductors on InSb Seed. J. Crystal Growth 310, 1433 (2008)
Nishinaga, T., Ge, P., Huo, C., He, J., Nakamura, T.: Melt Growth of Striation and Etch Pit Free GaSb under Microgravity. J. Crystal Growth 174, 96 (1997)
Okano, Y., Miyazawa, M., Dost, S., Dao, L.H., Kumagawa, M.: Drop Experiments on Crystallization of InGaSb Semiconductors. J. Crystal Growth 237-239, 1831 (2002)
Okano, Y., Umemura, S., Enomoto, Y., Hayakawa, Y., Kumagawa, M., Hirata, A., Dost, S.: Numerical Study of Marangoni Convection Effect on the Melting of GaSb/InSb/GaSb. J. Crystal Growth 235, 35 (2002)
Okitsu, K., Hayakawa, Y., Hirata, A., Fujiwara, S., Okano, Y., Imaishi, N., Yoda, S., Oida, T., Yamaguchi, T., Kumagawa, M.: Gravitational Effects on Mixing and Growth Morphology of an In 0.5Ga 0.5Sb System. Cryst. Res. Tech. 31, 969 (1996)
Okitsu, K., Hayakawa, Y., Yamaguchi, T., Hirata, A., Fujiwara, S., Okano, Y., Imaishi, N., Yoda, S., Oida, T., Kumagawa, M.: Melt Mixing of the 0.3In/0.7GaSb/0.3Sb Solid Combination by Diffusion under Microgravity. Jpn. J. Appl. Phys. 36, 3613 (1997)
Rajesh, G., Arivanandhan, A., Suzuki, N., Tanaka, A., Morii, H., Aoki, A., Koyama, T., Momose, Y., Ozawa, T., Inatomi, Y., Takagi, Y., Okano, Y., Hayakawa, Y.: Effects of Solutal Convection on the Dissolution of GaSb into InSb Melt and Solute Transport Mechanism in InGaSb Solution: Numerical Simulations and In-situ Observation Experiments. J. Crystal Growth 324, 157 (2011)
Rajesh, G., Arivanandhan, M., Morii, H., Aoki, T., Koyama, T., Momose, Y., Tanaka, A., Ozawa, T., Inatomi, Y., Hayakawa, Y.: In-situ Observations of Dissolution Process of GaSb into InSb Melt by X-ray Penetration Method. J. Crystal Growth 312, 2677 (2010)
Sakata, K., Mukai, M., Arivanandhan, M., Rajesh, G., Ishikawa, T., Inatomi, Y., Hayakawa, Y.: Crystal Growth of Ternary Alloy Semiconductor and Preliminary Study for Microgravity Experiment at the International Space Station. Trans. JSASS Aerospace Tech. Japan 12, ph_31 (2014)
Stringfellow, G.H.: Calculation of Ternary Phase Diagrams of III-V Systems. Phys. Chem. Solids 33, 665 (1972)
Witt, A.F., Gatos, H.C., Lichtensteiger, M., Lavine, M.C., Herman, C.J.: Crystal Growth and Steady-State Segregation under Zero Gravity: InSb. J. Electrochem. Soc. 122, 276 (1978)
Zhang, Q., Xiong, Z., Jiang, J., Li, w., Xu, G., Bai, S., Cui, P., Chen, L.: Enhanced thermoelectric performance in In1_xGaxSb originating from the scattering of point defects and nanoinclusion. J. Mater. Chem. 21, 12398 (2011)
Acknowledgments
We thank Prof. M.Kumagawa, (Shizuoka Univ.), Prof. A.Hirata (Waseda Univ.), Prof. N.Imaishi (Kyusyu Univ), S.Yoda (JAXA), and Prof. K.Arafune (University of Hyogo) for the experiment using a Chinese recovery satellite. The part of the work was supported by the cooperative research projects of the Research Institute of Electronics, Shizuoka University.
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Yu, J., Liu, Y., Pan, X. et al. A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10. Microgravity Sci. Technol. 28, 143–154 (2016). https://doi.org/10.1007/s12217-016-9493-x
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DOI: https://doi.org/10.1007/s12217-016-9493-x