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Deep-ultraviolet photodetector based on exfoliated n-type β-Ga2O3 nanobelt/p-Si substrate heterojunction

  • Materials (Organic, Inorganic, Electronic, Thin Films)
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Abstract

Low-dimensional semiconductor p-n junctions as components for optoelectronic devices are considered to be more promising than thin film equivalents. We fabricated heterojunction p-n solar blind photodiodes with the configuration of n-type β-Ga2O3 nanobelts contacted onto p-Si substrates. The junction between β-Ga2O3 and Si was formed by van der Waals interactions. The fabricated heterojunction p-n diodes exhibited typical rectifying current–voltage characteristics, with a rectification ratio as high as 1.56×104 at ±20 V and an ideality factor of approximately eight. Photoresponsive measurements showed that the heterojunction p-n diodes had a high sensitivity and selectivity for light at a wavelength of 254 nm, with fast response and decay characteristics. For the fast-response components, the response time constant was 4.06 s and the decay time constant was 0.16 s. The exfoliated β-Ga2O3 nanobelt/Si p-n heterojunction presented here constitutes a functional unit for low-dimensional ultra-wide bandgap electronic and optoelectronic devices.

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Authors and Affiliations

  1. Department of Nano-photonics Engineering, Korea University, Seoul, 02841, Korea

    Gahyun Shin & Jihyun Kim

  2. Department of Chemical and Biological Engineering, Korea University, Seoul, 02841, Korea

    Gahyun Shin, Hong-Yeol Kim & Jihyun Kim

Authors
  1. Gahyun Shin
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  2. Hong-Yeol Kim
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  3. Jihyun Kim
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Correspondence to Jihyun Kim.

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Shin, G., Kim, HY. & Kim, J. Deep-ultraviolet photodetector based on exfoliated n-type β-Ga2O3 nanobelt/p-Si substrate heterojunction. Korean J. Chem. Eng. 35, 574–578 (2018). https://doi.org/10.1007/s11814-017-0279-7

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  • DOI: https://doi.org/10.1007/s11814-017-0279-7

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