Abstract
TiC films were formed by low-frequency (60 Hz) plasma-enhanced chemical vapor deposition (LFPECVD) using TiCl4, CH4, and H2 gas mixtures. The effects of the growth temperature and feasibility for the on-glass deposition of TiC films were investigated. The growth kinematics of TiC films was controlled mainly by surface-reactions below 450 ºC, and dominated by a mass-transfer process above 450 ºC. The films exhibited a face-centered cubic structure, and the preferred orientation of film growth was mainly the (200) plane. The [C]/[Ti] ratio was over-stoichiometric below 400 ºC, and became almost stoichiometric above 450 ºC. The optical properties of the films were characterized by high reflectance in near infrared (NIR) region and a steep edge in the visible region, and the reflectance in the NIR region increased gradually with increasing temperature. As a result, LF-PECVD is a useful technique to acquire Cl-free TiC films at relatively low temperatures.
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Effects of growth temperature on titanium carbide (TiC) film formation using low-frequency (60 Hz) plasma-enhanced chemical vapor deposition
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Kim, H.T., Lee, SY., Lee, HR. et al. Effects of growth temperature on titanium carbide (TiC) film formation using low-frequency (60 Hz) plasma-enhanced chemical vapor deposition. Korean J. Chem. Eng. 35, 246–250 (2018). https://doi.org/10.1007/s11814-017-0243-6
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DOI: https://doi.org/10.1007/s11814-017-0243-6