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Optical and electrical properties of room temperature prepared α-IGZO thin films using an In2Ga2ZnO7 ceramic target

使用In2Ga2ZnO7陶瓷靶材制备& alpha; -IGZO 薄膜的光电性能研究

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Abstract

In this study, a high-purity In2Ga2ZnO7 ceramic target was used to deposit indium gallium zinc oxide (IGZO) films by RF magnetron sputtering technology. The microstructure, growth state, optical and electrical properties of the IGZO films were studied. The results showed that the surface of the IGZO film was uniform and smooth at room temperature. As the substrate temperature increased, the surface roughness of the film gradually increased. From room temperature to 300 ° C, all the films maintained amorphous phase and good thermal stabilities. Moreover, the transmission in the visible region decreased from 91.93% to 91.08%, and the band gap slightly decreased from 3.79 to 3.76 eV. The characterization of the film via atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS) demonstrated that the film prepared at room temperature exhibited the lowest surface roughness and the largest content of oxygen vacancies. With the rise in temperature, the non-homogeneous particle distribution, increase in the surface roughness, and reduction in the number of oxygen vacancies resulted in lower performance of the α-IGZO film. Comprehensive analysis showed that the best optical and electrical properties can be obtained by depositing IGZO films at room temperature, which indicates their potential applications in flexible substrates.

摘要

本文采用高纯度In2Ga2ZnO7陶瓷靶材通过射频磁控溅射技术沉积铟镓锌氧化物(IGZO)薄膜. 研究了IGZO 薄膜的微观结构、生长状态、光学和电学性能. 结果表明, 在室温下制备的IGZO 薄膜表面均匀且光滑. 随着衬底温度的升高, 薄膜的表面粗糙度逐渐增大. 从室温升至300 & deg; C, 所有制备的IGZO 薄膜均是非晶态的, 并具有良好的热稳定性. 此外, 可见光区域的透过率从91.93% 下降到91.08%, 光学带隙略有下降(3.79~3.76 eV). 通过原子力显微镜(AFM)和X 射线光电子能谱(XPS)对不同温度下制备的IGZO 薄膜的表征, 可知在室温下制备的薄膜的表面粗糙度最小, 并且氧空位含量最高. 随着温度的升高, 不均匀的颗粒分布, 表面粗糙度的增加, 以及氧空位的减少导致了& alpha; -IGZO 薄膜的性能降低. 综合分析可知, 在室温下沉积的IGZO 薄膜可以获得最佳的光学和电学性能, 同时也预示了其在柔性衬底上的应用潜力.

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Authors and Affiliations

  1. School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, China

    Yu Zhang  (张雨), Jie Chen  (陈杰), Ben-shuang Sun  (孙本双), Zhi-jun Wang  (王之君), Shu-han Liu  (刘书含), Yong-chun Shu  (舒永春) & Ji-lin He  (何季麟)

  2. College of Sciences, Xi’an Shiyou University, Xi’an, 710065, China

    Shuai Liu  (刘帅)

  3. State Key Laboratory of Special Rare Metal Materials, Northwest Rare Metal Materials Research Institute, Shizuishan, 753000, China

    Jie Chen  (陈杰)

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  1. Yu Zhang  (张雨)
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Correspondence to Jie Chen  (陈杰).

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Foundation item

Project(2018M632797) supported by the Postdoctoral Science Foundation of China; Project(52004253) supported by the National Natural Science Foundation of China

Contributors

CHEN Jie provided the concept and edited the draft of manuscript. ZHANG Yu conducted the literature review, analyzed the measured data and wrote the first draft of the manuscript. LIU Shuai, LIU Shu-han and WANG Zhi-jun helped to revise manuscript. SUN Ben-shuang, SHU Yong-chun and HE Ji-lin edited the draft of manuscript. All authors replied to reviewers’ comments and revised the final version.

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The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

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Zhang, Y., Chen, J., Sun, Bs. et al. Optical and electrical properties of room temperature prepared α-IGZO thin films using an In2Ga2ZnO7 ceramic target. J. Cent. South Univ. 29, 1062–1074 (2022). https://doi.org/10.1007/s11771-022-4978-9

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