Abstract
Nowadays, the power density of the precise integrated circuit is sharply increasing, improving the thermal conductivity of the electronic packaging materials is becoming more and more important. The aluminum alloys with high silicon content (such as Al-50Si) are becoming more and more popular in electronic packaging field due to their low cost and lightweight. But their thermal conductivities are needed to be promoted. In the present work, the cerium with different dosages (xCe = 5-20 wt.%) is introduced in to the Al hyper-eutectic alloy with 25 wt.% silicon. The addition of cerium is helpful to decrease the melting point of the Al-25Si alloy, which is favorable to save the processing cost. The thermal conductivity of this alloy is not lower than 100 W/(m K), which is close to the eutectic Al-Si alloy. From 25 to 200 °C, the coefficient of thermal expansion (CTE) of the Al-25Si-20Ce alloy is about 15-16 ppm/K. The relatively high thermal conductivity of the Al-25Si-xCe alloys is due to the addition of rare earth is favorable to the refinement of primary silicon phase. This study provides a design strategy toward the electronic packaging materials.
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Acknowledgments
The authors acknowledge for the support by the Large Scientific Facility Open Subject of Songshan Lake, Dongguan, Guangdong (KFKT2022A10), Professional core curriculum construction “mold manufacturing process” (Dongguan Institute of Technology Teaching Research and Reform Project) (202002049), and Professional core curriculum construction “Stamping Process and Die Design” (Teaching Research and Reform Project of Dongguan Institute of Technology) (201902089).
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Shang, X., Li, Y., Zhou, Z. et al. Development of Al-25Si-xCe Alloy with High Conductivity and Low Expansivity for Thermal Management Purpose. J. of Materi Eng and Perform (2024). https://doi.org/10.1007/s11665-024-09511-6
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DOI: https://doi.org/10.1007/s11665-024-09511-6