Abstract
We demonstrated device architectures implementing suspended InAs nanowires for thermal conductivity measurements. To this aim, we exploited a fabrication protocol involving the use of a sacrificial layer. The relatively large aspect ratio of our nanostructures combined with their low electrical resistance allows to exploit the four-probe 3ω technique to measure the thermal conductivity, inducing electrical self-heating in the nanowire at frequency ω and measuring the voltage drop across the nanostructure at frequency 3ω. In our systems, field effect modulation of the transport properties can be achieved exploiting fabricated side-gate electrodes in combination with the SiO2/Si ++ substrate acting as a back gate. Our device architectures can open new routes to the all-electrical investigation of thermal parameters in III-V semiconductor nanowires, with a potential impact on thermoelectric applications.
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Acknowledgments
This work was supported in part by the CNR through the bilateral CNR-RFBR projects 2015-2017. F.R. and V.D. acknowledge the partial financial support of the MIUR through the FIRB project RBFR13NEA4 “UltraNano.”
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This article is an invited paper selected from presentations at “GiTE 2018” (Thermoelectricity Days), held February 21-22, 2018, in Santa Margherita Ligure, Italy, and has been expanded from the original presentation.
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Rocci, M., Demontis, V., Prete, D. et al. Suspended InAs Nanowire-Based Devices for Thermal Conductivity Measurement Using the 3ω Method. J. of Materi Eng and Perform 27, 6299–6305 (2018). https://doi.org/10.1007/s11665-018-3715-x
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DOI: https://doi.org/10.1007/s11665-018-3715-x