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Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics

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Abstract

A numerical simulation-based high-performance metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) on an ultra-wide band gap β-Ga2O3 (Eg ~ 4.8 eV) substrate is presented. β-Ga2O3 (beta gallium oxide) has gained significant attention in radio frequency (RF) and power electronics applications. GaN HEMTs on β-Ga2O3 substrates are emerging HEMT technology for future RF and power electronics. Enhancement mode AlGaN/GaN MISHEMTs on β-Ga2O3 are proposed and analyzed for their DC and RF performance for Lg = 0.8 µm using ATLAS TCAD. A MISHEMT based on a SiN (Al2O3) insulator exhibited a high drain current density (IDS) of 3.62 (3.7) A/mm, blocking voltage (VBR) of 898 (1505) V, transconductance (gm) of 1.09 (1.13) S/mm, and cut-off frequency (fT) of 49 (44) GHz. Moreover, the proposed MISHEMT exhibited a very low on-resistance of 5 Ω mm. Combined with a higher cut-off frequency and high breakdown voltage, the proposed MISHEMT is suitable for future power switching and RF applications.

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Acknowledgments

The authors acknowledge the Anil Neerukonda Institute of Technology and Sciences, Visakhapatnam, India-531 162 for providing the support and facility to carry out this research work.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Anil Neerukonda Institute of Technology and Sciences, Visakhapatnam, 531162, India

    P. Murugapandiyan & Kalva Sri Rama Krishna

  2. Department of Electrical and Electronics Engineering, Anil Neerukonda Institute of Technology and Sciences, Visakhapatnam, 531162, India

    A. Revathy

  3. Department of Electronics and Communication Engineering, Karunya Institute of Technology and Sciences, Coimbatore, Tamil Nadu, India

    Augustine Fletcher

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Murugapandiyan, P., Sri Rama Krishna, K., Revathy, A. et al. Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics. J. Electron. Mater. (2024). https://doi.org/10.1007/s11664-024-11005-z

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