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Topological Insulator TlBiSe2/GaN Vertical Heterojunction Diode for High Responsive Broadband UV to Near-Infrared Photodetector

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Abstract

Quasi-2D thin film of TI material TlBiSe2, as well as TlBiSe2/GaN configuration, have been fabricated employing the thermal evaporation technique. Raman peaks of vibrational modes were analyzed in a TlBiSe2/GaN heterojunction showing a substrate-induced signal for the surface phonon mode (SPM). The study of ultrafast kinetics of charge carriers and transient absorption spectroscopy (TAS) gave excited-state spectrum characteristics and exciton dynamics in TlBiSe2/GaN heterojunction. The electrical characterization showed that the heterojunction device exhibited a good diode nature with an excellent rectification ratio of 160. The photodetection capabilities were examined by optical power varying from 2.37 µW to 3.78 µW in the ultraviolet to near-infrared region (300–900 nm). It demonstrated maximum photoresponse at 500 nm in forward and reverse bias. The current conduction mechanism and enhancement in current under light impact were explained using energy band modeling. The present work is important in regarding the development of photodetectors of succeeding generations with a topological insulator material.

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Acknowledgments

The Dr. Pramod Kumar would like to thank Science and Engineering Research Board, Govt. of India (CRG/2022/000070) and CSTUP (CST/D-1307) for providing the financial support to carry out this work. Chemistry & IRCB Laboratory, Department of Applied Sciences, Indian Institute of Information Technology Allahabad for synthesis. VLSI Lab, Department of Electronics, and communications, IIIT Allahabad for electrical characterization. This work was also funded by Science and Engineering Research Board under Early Career Research Award Scheme (ECR/2017/001852), Department of Science and Technology.

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  1. Spintronics and Magnetic Materials Laboratory, Department of Applied Sciences, Indian Institute of Information Technology Allahabad, Prayagraj, 211015, India

    Gyanendra Kumar Maurya, Vidushi Gautam, Faizan Ahmad, Roshani Singh, Sandeep Verma, Akhilesh Tiwari & Pramod Kumar

  2. Department of Electronics and Communication Engineering, Indian Institute of Information Technology Allahabad, Prayagraj, 211015, India

    Kavindra Kandpal

  3. CSIR-National Physical Laboratory, New Delhi, 110012, India

    Rachana Kumar & Mahesh Kumar

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  1. Gyanendra Kumar Maurya
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Contributions

GKM: Conceptualization, Methodology, Data curation, original draft Preparation VG, RS, Faizan Ahamad and Sandeep Kumar Verma: Methodology, Investigation, Formal Anlysis, Data Curation RK and MK: Data Curation, Ultrafast dynamics and Writing—Reviewing and Editing AT: Writing—Reviewing and Editing PK: Conceptualization, Methodology, Data curation, original draft preparation, Writing- Reviewing and Editing, Supervision, Visualization, Investigation

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Maurya, G.K., Gautam, V., Ahmad, F. et al. Topological Insulator TlBiSe2/GaN Vertical Heterojunction Diode for High Responsive Broadband UV to Near-Infrared Photodetector. J. Electron. Mater. 53, 1561–1576 (2024). https://doi.org/10.1007/s11664-023-10889-7

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  • DOI: https://doi.org/10.1007/s11664-023-10889-7

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