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Electronic and Thermoelectric Properties of Armchair-Edge Silicene Nanoribbons: Role of Quantum Antidot Arrays

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Abstract

In this study, we investigated the electronic and thermoelectric properties of a pristine armchair-edge silicene nanoribbon (PASiNR) and armchair-edge silicene nanoribbons (ASiNRs) defected by quantum antidot arrays, called defective armchair edge silicene nanoribbons (DASiNRs). We considered DASiNRs in which quantum antidot arrays with rhomboid and hexagonal geometries were created. The results indicate that the creation of quantum antidot arrays has a significant impact on the electronic properties of ASiNRs, so the modified band structure leads to significant modifications in the current-voltage characteristic that shows a negative differential resistance at lower bias voltages. Furthermore, due to the modified electronic band structures and transmission spectra, we found that the Seebeck coefficient and the electronic figure of merit, and consequently the thermoelectric performance of DASiNRs, especially with asymmetric rhomboid-type structures, is much higher than the PASiNR. We use a tight-binding model and non-equilibrium Green's function formalism to obtain the electronic and thermoelectric properties. All numerical studies and simulations were performed using MATLAB codes.

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  1. School of Physics, Damghan University, Damghan, Iran

    R. Kalami & S. A. Ketabi

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Kalami, R., Ketabi, S.A. Electronic and Thermoelectric Properties of Armchair-Edge Silicene Nanoribbons: Role of Quantum Antidot Arrays. J. Electron. Mater. 52, 6566–6577 (2023). https://doi.org/10.1007/s11664-023-10578-5

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