Abstract
This study focuses on the utilization of composite material for the active layer of memristors, which are used in memory devices and resistive switching applications. In this context, composite ink was produced using multi-walled carbon nanotubes (CNTs) and sodium alginate. The electrical characterization of the fabricated memristor indicates the presence of the capacitive effect. Experimental results show that the DC offset voltage improves the memristive property related to the bow-tie hysteresis. Notably, the capacitance value decreased with increasing DC offset amplitudes. In addition, durability and retention tests have been carried out to assess the reliability of the memristors. Also, scanning electron microscopy (SEM) was used to examine the surface morphology of the composite ink, and Raman spectroscopy was used to investigate its chemical structure and molecular interactions.
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C.J. Xue, Y. Zhang, Y. Chen, G. Sun, J.J. Yang, and H.Li, Emerging Non-volatile memories : opportunities and challenges, in Proceedings of the Seventh IEEE/ACM/IFIP International Conference on Hardware/Software Codesign and System Synthesis (2011), p. 325.
J.S. Meena, S.M. Sze, U. Chand, and T.Y. Tseng, Overview of emerging nonvolatile memory technologies. Nanoscale Res. Lett. 9, 1 (2014).
H.K. Liu, D. Chen, H. Jin, X.F. Liao, B. He, K. Hu, and Y. Zhang, A survey of non-volatile main memory technologies: state-of-the-arts, practices, and future directions. J. Comput. Sci. Technol. 36, 4 (2021).
D. Gokcen, Memristor based multi-state shift register architecture. Hittite J. Sci. Eng. 6, 185 (2019).
I. Vourkas and G.C. Sirakoulis, Emerging memristor-based logic circuit design approaches: a review. IEEE Circuit Syst. Mag. 16, 15 (2016).
M. Khalid, Review on various memristor models, characteristics, potential applications, and future works. Trans. Electr. Electron. Mater. 20, 289 (2019).
L. Chua, Memristor-the missing circuit element. IEEE Trans. Circuit Theory 18, 507 (1971).
D.B. Strukov, G.S. Snider, D.R. Stewart, and R.S. Williams, The missing memristor found. Nature 453, 80 (2008).
D. Gokcen, O. Şentürk, E. Karaca, N.Ö. Pekmez, and K. Pekmez, Memristive behavior of TiOx obtained via Pb(II)-assisted anodic oxidation process. J. Mater. Sci. Mater. Electron. 30, 5733 (2019).
E. Gul and D. Gokcen, Active memristive layer deposition via Mn(II)-assisted anodic oxidation of titanium. ECS J. Solid State Sci. Technol. 9, 054004 (2020).
K. Saka Yıldırım, Y. Ince Keser, and D. Gokcen, Integration of lift-off based lithography process for memristor fabrication, in 2020 International Conference on Electrical, Communication and Computer Engineering, ICECCE 2020 (2020), p. 12.
J. Domaradzki, D. Wojcieszak, T. Kotwica, and E. Mańkowska, Memristors: a short review on fundamentals, structures, materials and applications. Int. J. Electron. Telecommun. 66, 373 (2020).
H. Liu, M. Wei, and Y. Chen, Optimization of non-linear conductance modulation based on metal oxide memristors. Nanotechnol. Rev. 7, 443 (2018).
Y. İnce Keser, K. Saka Yıldırım, and D. Gokcen, Patterning titanium dioxide based memristors using electron beam lithography, in 2020 International Congress on Human-Computer Interaction, Optimization and Robotic Applications (HORA) (2020), p. 1
K. Liao, P. Lei, M. Tu, S. Luo, T. Jiang, W. Jie, and J. Hao, Memristor based on inorganic and organic two-dimensional materials: mechanisms, performance, and synaptic applications. ACS Appl. Mater. Interface 13, 32606 (2021).
X. Xiao, J. Hu, S. Tang, K. Yan, B. Gao, H. Chen, and D. Zou, Recent advances in halide perovskite memristors: materials, structures, mechanisms, and applications. Adv. Mater. Technol. 5, 1900914 (2020).
Q. Zhao, Z. Xie, Y.P. Peng, K. Wang, H. Wang, X. Li, H. Wang, J. Chen, H. Zhang, and X. Yan, Current status and prospects of memristors based on novel 2D materials. Mater. Horiz. 7, 1495 (2020).
T.H. Kim, E.Y. Jang, N.J. Lee, D.J. Choi, K.J. Lee, J.T. Jang, J.S. Choi, S.H. Moon, and J. Cheon, Nanoparticle assemblies as memristors. Nano Lett. 9, 2229 (2009).
L. Yuan, S. Liu, W. Chen, F. Fan, and G. Liu, Organic memory and memristors: from mechanisms, materials to devices. Adv. Electron. Mater. 7, 2100432 (2021).
T.J. Raeber, Z.C. Zhao, B.J. Murdoch, D.R. McKenzie, D.G. McCulloch, and J.G. Partridge, Resistive switching and transport characteristics of an all-carbon memristor. Carbon 136, 280 (2018).
O.A. Ageev, Y.F. Blinov, O.I. Il’in, A.S. Kolomiitsev, B.G. Konoplev, M.V. Rubashkina, V.A. Smirnov, and A.A. Fedotov, Memristor effect on bundles of vertically aligned carbon nanotubes tested by scanning tunnel microscopy. Tech. Phys. 58, 1831 (2013).
M.V. Ilina, O.I. Il’in, N.N. Rudyk, A.A. Konshin, and O.A. Ageev, The memristive behavior of non-uniform strained carbon nanotubes. Haнocиcтeмы Физикa, Xимия Maтeмaтикa 9, 76 (2018).
D.V. Gorodetskiy, A.V. Gusel'nikov, S.N. Shevchenko, M.A. Kanygin, A.V. Okotrub, and Y.V. Pershin, Memristive model of hysteretic field emission from carbon nanotube arrays. J. Nanophotonics 10, 012524 (2016).
J.G. Min and W.J. Cho, Chitosan-based flexible memristors with embedded carbon nanotubes for neuromorphic electronics. Micromachines 12, 1259 (2021).
Q. Lu, F. Sun, L. Liu, L. Li, M. Hao, Z. Wang, and T. Zhang, Bio-inspired flexible artificial synapses for pain perception and nerve injuries. Npj Flex. Electron. 4, 1 (2020).
A. Radoi, M. Dragoman, and D. Dragoman, Memristor device based on carbon nanotubes decorated with gold nanoislands. Appl. Phys. Lett. 99, 093102 (2011).
H. Suzuki, M. Kishibuchi, K. Shimogami, M. Maetani, K. Nasu, T. Nakagawa, Y. Tanaka, H. Inoue, and Y. Hayashi, Memristive behavior in one-dimensional hexagonal boron nitride/carbon nanotube heterostructure assemblies. ACS Appl. Electron. Mater. 3, 3555 (2021).
M.V. Il’ina, O.I. Il’in, O.I. Osotova, S.A. Khubezhov, and O.A. Ageev, Memristive effect in nitrogen-doped carbon nanotubes. Nanobiotechnol. Rep. 16, 821 (2021).
L. Wang, J. Yang, Y. Zhang, and D. Wen, Dual-tunable memristor based on carbon nanotubes and graphene quantum dots. Nanomaterials 11, 2043 (2021).
S.Y. Min and W.J. Cho, Resistive switching characteristic improvement in a single-walled carbon nanotube random network embedded hydrogen Silsesquioxane thin films for flexible memristors. Int. J. Mol. Sci. 22, 3390 (2021).
X. Zhao, J. Xu, D. Xie, Z. Whang, H. Xu, Y. Lin, J. Hu, and Y. Liu, Natural acidic polysaccharide-based memristors for transient electronics: highly controllable quantized conductance for integrated memory and nonvolatile logic applications. Adv. Mater. 33, 2104023 (2021).
B. Sun, Y. Chen, M. Xiao, G. Zhou, S. Ranjan, W. Hou, X. Zhu, Y. Zhao, S.A.T. Redfern, and Y. Norman Zhou, A unified capacitive-coupled memristive model for the nonpinched current-voltage hysteresis loop. Nano Lett. 19, 6461 (2019).
M. Solazzo, K. Krukiewicz, A. Zhussupbekova, K. Fleischer, M.J. Biggs, and M.G. Monaghan, PEDOT: PSS interfaces stabilised using a PEGylated crosslinker yield improved conductivity and biocompatibility. J. Mater. Chem. B 7, 4811 (2019).
Y.S. Zhang, N.E. Courtier, Z. Zhang, K. Liu, J.J. Bailey, A.M. Boyce, G. Richardson, P.R. Shearing, E. Kendrick, and D.J.L. Brett, A review of lithium-ion battery electrode drying: mechanisms and metrology. Adv. Energy Mater. 12, 2102233 (2022).
F.N.A.M. Sabri, M.R. Zakaria, and H.M. Akil, Dispersion and stability of multiwalled carbon nanotubes (MWCNTs) in different solvents. AIP Conf. Proc. 2267, 020043 (2020).
B. Kılıçarslan, I. Bozyel, D. Gokcen, and C. Bayram, Sustainable macromolecular materials in flexible electronics. Macromol. Mater. Eng. 307, 2100978 (2022).
H. Abunahla, Y. Halawani, A. Alazzam, and B. Mohammad, NeuroMem: analog graphene-based resistive memory for artificial neural networks. Sci. Rep. 10, 1 (2020).
J. Hansson, A. Nylander, M. Flygare, K. Svensson, L. Ye, T. Nilsson, Y. Fu, and J. Liu, Effects of high temperature treatment of carbon nanotube arrays on graphite: increased crystallinity anchoring and inter-tube bonding. Nanotechnology 31, 455708 (2020).
Q. Yang, L. Ma, S. Xiao, D. Zhang, A. Djoulde, M. Ye, Y. Lin, S. Geng, X. Li, T. Chen, and L. Sun, Electrical conductivity of multiwall carbon nanotube bundles contacting with metal electrodes by nano manipulators inside SEM. Nanomaterials 11, 1290 (2021).
A.G.S. Filho, A. Jorio, G.G. Samsonidze, G. Dresselhaus, R. Saito, and M.S. Dresselhaus, Raman spectroscopy for probing chemically/physically induced phenomena in carbon nanotubes. Nanotechnology 14, 1130 (2003).
M.S. Dresselhaus, G. Dresselhaus, A. Jorio, A.G.S. Filho, M.A. Pimenta, and R. Saito, Single nanotube Raman spectroscopy. Acc. Chem. Res. 35, 1070 (2002).
G. Wu, H. Zheng, Y. Xing, C. Wang, X. Yuan, and X. Zhu, A Sensitive Electrochemical sensor for environmental toxicity monitoring based on tungsten disulfide nanosheets/hydroxylated carbon nanotubes nanocomposite. Chemosphere 286, 131602 (2022).
S. Osswald, M. Havel, and Y. Gogotsi, Monitoring oxidation of multiwalled carbon nanotubes by Raman spectroscopy. J. Raman Spectrosc. 38, 728 (2007).
T.Y. Chen, T.L. Lin, C.C. Chen, C.M. Chen, and C.F. Chen, Improved catalytic performance of Pt supported on multi-wall carbon nanotubes as cathode for direct methanol fuel cell applications prepared by dual-stepped surface thiolation processes. J. Chin. Chem. Soc. 56, 1236 (2009).
R. Afrin, N.A. Shah, M. Abbas, M. Amin, and A.S. Bhatti, Design and analysis of functional multiwalled carbon nanotubes for infrared sensors. Sens. Actuator A Phys. 203, 142 (2013).
T.D. Dongale, K.P. Patil, P.K. Gaikwad, and R.K. Kamat, Investigating conduction mechanism and frequency dependency of nanostructured memristor device. Mater. Sci. Semicond. Process. 38, 228 (2015).
X. Liu, J.L. Spencer, A.B. Kaiser, and W.M. Arnold, Electric-field oriented carbon nanotubes in different dielectric solvents. Curr. Appl. Phys. 4, 125 (2004).
M. Monti, M. Natali, L. Torre, and J.M. Kenny, The alignment of single walled carbon nanotubes in an epoxy resin by applying a DC electric field. Carbon 50, 2453 (2012).
K. Bubke, H. Gnewuch, M. Hempstead, J. Hammer, and M.L.H. Green, Optical anisotropy of dispersed carbon nanotubes induced by an electric field. Appl. Phys. Lett. 71, 1906 (1997).
C.A. Martin, J.K.W. Sandler, A.H. Windle, M.K. Schwarz, W. Bauhofer, K. Schulte, and M.S.P. Shaffer, Electric field-induced aligned multi-wall carbon nanotube networks in epoxy composites. Polymer 46, 877 (2005).
Acknowledgments
The authors would like to acknowledge National Nanotechnology Research Center (UNAM) at Bilkent University for SEM images and Raman spectroscopy. This study is a part of Yasemen Ince Keser's doctoral thesis.
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Ince Keser, Y., Sekertekin, Y. & Gokcen, D. Capacitive Effects of Memristive Structure Composed of Multi-walled CNT and Sodium Alginate Under DC Offset. J. Electron. Mater. 52, 2012–2019 (2023). https://doi.org/10.1007/s11664-022-10165-0
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DOI: https://doi.org/10.1007/s11664-022-10165-0