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Study of the Performance Enhancement of MoO3/Au Bilayer Source–Drain Electrode for Top-Contact Pentacene-Based OTFT

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Abstract

To achieve an improved and low-cost pentacene-based organic thin-film transistor (OTFT), we fabricated three sets of OTFT devices with a MoO3 transition metal oxide layer at the pentacene/electrode interface using a Au metal electrode. Among these devices, one device contains a single source–drain metal electrode, and in the other two devices, we inserted the MoO3 layer. We used MoO3 material in two different forms: one is a commercially available form (laboratory-prepared pure MoO3, purchased from Sigma-Aldrich), and the other is oxidized MoO3 which we prepared by oxidizing Mo filament by thermal evaporation in our laboratory. We found that the oxidized MoO3/Au bilayer source–drain electrode OTFT device exhibits better performance than the other OTFT devices we fabricated with a laboratory-prepared pure MoO3/Au bilayer source–drain electrode combination. The estimated device parameters of the oxidized MoO3/Au bilayer source–drain electrode OTFT including field-effect mobility, on/off ratio, threshold voltage and sub-threshold slope are 1.7 cm2v−1s−1, 2.5 × 106, −3.5  V and 0.39 V/decade, respectively.

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  1. Thin Film Lab. Department of Physics, J. B. College, Jorhat, Assam, 785001, India

    Tribeni Borthakur & Ranjit Sarma

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  1. Tribeni Borthakur
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  2. Ranjit Sarma
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Correspondence to Tribeni Borthakur.

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Borthakur, T., Sarma, R. Study of the Performance Enhancement of MoO3/Au Bilayer Source–Drain Electrode for Top-Contact Pentacene-Based OTFT. J. Electron. Mater. 51, 5336–5342 (2022). https://doi.org/10.1007/s11664-022-09765-7

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