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Influence of Nucleation Layers on MOVPE Growth of Semipolar (\(11{\bar{2}}2\)) GaN on m-Plane Sapphire

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Abstract

The influence of the underlying nucleation layer on the properties of semipolar \((11{\bar{2}}2)\) GaN grown on m-plane sapphire by metalorganic vapor-phase epitaxy has been investigated. \((11{\bar{2}}2)\) GaN epilayers of ~ 1 μm thickness were grown using four different initiating sequences: low-temperature AlN and GaN, and high-temperature AlN buffer layers, and directly (high-temperature GaN). The choice of nucleation layer had a pronounced effect on the surface morphology and crystal quality of the overlying GaN epilayer. In comparison, direct growth of \((11{\bar{2}}2)\) GaN without any buffer layer provided the best crystal quality with a rocking-curve \(\omega \) full-width at half-maximum (FWHM) value of 720 arcsec along the \([11{\bar{2}}{\bar{3}}]\) direction and relatively enhanced near-band-edge photoluminescence emission, thus showing this direct growth process to be a simple route for synthesis of semipolar \((11{\bar{2}}2)\) GaN layers.

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Acknowledgments

The authors are grateful to Sandip Ghosh for helpful discussions, Maheshwar Gokhale for help with HRXRD measurements, Amit P. Shah for help with PL measurements, and Rudheer D. Bapat and Shashank C. Purandare for help with TEM imaging of the sample. This work was supported by the Govt. of India through TIFR research grant 12P0168.

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  1. Department of Condensed Matter Physics and Material Science, Tata Institute of Fundamental Research, Mumbai, 400 005, India

    A. Azizur Rahman, Nirupam Hatui, Carina B. Maliakkal, Priti Gupta, Jayesh B. Parmar, Bhagyashree A. Chalke & Arnab Bhattacharya

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  1. A. Azizur Rahman
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Rahman, A.A., Hatui, N., Maliakkal, C.B. et al. Influence of Nucleation Layers on MOVPE Growth of Semipolar (\(11{\bar{2}}2\)) GaN on m-Plane Sapphire. Journal of Elec Materi 50, 4533–4539 (2021). https://doi.org/10.1007/s11664-021-08969-7

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