Abstract
To make full use of the solar spectrum, the performances of Al0.3Ga0.7As/GaAs/Ge and Al0.3Ga0.7As/GaAs/Si/Ge have been simulated using a one-dimensional device simulator called personal computer oe dimension (PC1D). The dependencies of simulated current density–voltage (J–V) and external quantum efficiency (EQE) results on the thicknesses of each sub-cell have been thoroughly analyzed to determine the preferred thickness. Compared to Al0.3Ga0.7As/GaAs/Ge (1.5/5/50 μm), Al0.3Ga0.7As/GaAs/Si (1.5/5/180 μm) has an increase of 0.36 V for open-circuit voltage (Voc) but a slight decrease of 1.55 mA/cm2 for short-circuit current density (Jsc). Subsequently, a monolithic InGaP/GaAs/InGaNAsSb (1.9/1.42/1 eV, 3 J) cell has been mechanically stacked on a Ge cell with four terminals. The Jsc value of 14 mA/cm2 and 6.5 mA/cm2 is calculated for each sub-cell of 3 J cell and bottom Ge cell with integration of EQE measurements. In addition, the TiO2/SiO2/TiO2 (150 nm/1 µm/150 nm, trilayer) interface provides a thermal conductance (2.9 × 106 W K−1) comparable to the direct bond interface. It is believed that the architecture of InGaP/GaAs/InGaNAsSb on the Ge cell with a trilayer interface between is the preferred choice.
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27 October 2021
A Correction to this paper has been published: https://doi.org/10.1007/s11664-021-09296-7
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Acknowledgements
This work was supported by the Natural Science Foundation of Jiangsu (No.BK20170288) and the National Natural Science Foundation of China (No. 51775544, U1508210).We thank Xing Sheng for constructive advice on measurements. We thank Semprius company for supplying cell samples. We thank Professor John Rogers for helpful instruction.
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Li, H., Tian, Y., Shen, L. et al. Comparison from Simulated Al0.3Ga0.7As/GaAs/Ge and Al0.3Ga0.7As/GaAs/Si/Ge to Experimental InGaP/GaAs/InGaNAsSb/Ge for Optimized Utilization of the Solar Spectrum. J. Electron. Mater. 50, 2005–2014 (2021). https://doi.org/10.1007/s11664-020-08722-6
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DOI: https://doi.org/10.1007/s11664-020-08722-6