Abstract
This work aims to clarify the electrical activities of threading dislocations and their relation with leakage sites in homoepitaxial GaN Schottky barrier diodes based on the electron-beam-induced current (EBIC) technique and transmission electron microscopy (TEM). First, the recombination activities of threading dislocations in epilayers grown on different substrates are compared by EBIC. The dislocation type is characterized based on etch pit measurements and TEM. The dislocation density and character are strongly affected by defects in the substrate. The recombination strength of dislocations is revealed to be correlated with their type. It is found that single dislocations including both edge and mixed type exhibit weak (< 5%) EBIC contrast, while dislocation clusters show strong contrast (up to 30%). Second, leakage sites in Schottky diodes are visualized by EBIC under reverse bias. There is no direct correlation between the initial leakage sites and threading dislocations; whereas, instead of dislocations, a variety of initial leakage/breakdown sites are found, including grown-in pit defects as initial breakdown sites and hillocks at the Schottky interface acting as strong leakage sites.
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S. Fujita, Jpn. J. Appl. Phys. 54, 030101 (2015).
H. Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, P.R. Chalker, M. Charles, K.J. Chen, N. Chowdhury, R. Chu, C. De Santi, M. De Souza, S. Decoutere, L. Di Cioccio, B. Eckardt, T. Egawa, P. Fay, J.J. Freedsman, L. Guido, O. Häberlen, G. Haynes, T. Heckel, D. Hemakumara, P. Houston, J. Hu, M. Hua, Q. Huang, A. Huang, S. Jiang, H. Kawai, D. Kinzer, M. Kuball, A. Kumar, K.B. Lee, X. Li, D. Marcon, M. März, R. McCarthy, G. Meneghesso, M. Meneghini, E. Morvan, A. Nakajima, E.M.S. Narayanan, S. Oliver, T. Palacios, D. Piedra, M. Plissonnier, R. Reddy, M. Sun, I. Thayne, A. Torres, N. Trivellin, V. Unni, M.J. Uren, M. Van Hove, D.J. Wallis, J. Wang, J. Xie, S. Yagi, S. Yang, C. Youtsey, R. Yu, E. Zanoni, S. Zeltner, and Y. Zhang, J. Phys. D Appl. Phys. 51, 163001 (2018).
I.C. Kizilyalli, A.P. Edwards, O. Aktas, T. Prunty, and D. Bour, IEEE Trans. Electron Devices 62, 414 (2015).
H. Ohta, N. Kaneda, F. Horikiri, Y. Narita, T. Yashida, T. Mishima, and T. Nakamura, IEEE Electron Device Lett. 36, 1180 (2015).
A. Usui, H. Sunakawa, A. Sakai, and A.A. Yamaguchi, Jpn. J. Appl. Phys. 36, 899 (1997).
K. Motoki, T. Okahisa, S. Nakahata, N. Matsumoto, H. Kimura, H. Kasai, K. Takemoto, K. Uematsu, M. Ueno, Y. Kumagai, A. Koukitu, and H. Seki, J. Cryst. Growth 237–239, 912 (2002).
Y. Oshima, T. Eri, M. Shibata, H. Sunakawa, K. Kobayashi, T. Ichihashi, and A. Usui, Jpn. J. Appl. Phys. 42, L1 (2003).
K. Xu, J.F. Wang, and G.Q. Ren, Chin. Phys. B 24, 066105 (2015).
J. Liu, J. Huang, X. Gong, J. Wang, K. Xu, Y. Qiu, D. Cai, T. Zhou, G. Ren, and H. Yang, CrystEngComm 13, 5929 (2011).
E.G. Brazel, M.A. Chin, and V. Narayanamurti, Appl. Phys. Lett. 74, 2367 (1999).
B. Kim, D. Moon, K. Joo, S. Oh, Y.K. Lee, Y. Park, Y. Nanishi, and E. Yoon, Appl. Phys. Lett. 104, 102101 (2014).
S. Usami, Y. Ando, A. Tanaka, K. Nagamatsu, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, H. Amano, Y. Sugawara, Y.Z. Yao, and Y. Ishikawa, Appl. Phys. Lett. 112, 182106 (2018).
J. Elsner, R. Jones, P.K. Sitch, V.D. Porezag, M. Elstner, T. Frauenheim, M.I. Heggie, S. Öberg, and P.R. Briddon, Phys. Rev. Lett. 79, 3672 (1997).
T. Hino, S. Tomiya, T. Miyajima, K. Yanashima, S. Hashimoto, and M. Ikeda, Appl. Phys. Lett. 76, 3421 (2000).
J.L. Weyher, S. Lazar, L. Macht, Z. Liliental-Weber, R.J. Molnar, S. Müller, V.G.M. Sivel, G. Nowak, and I. Grzegory, J. Cryst. Growth 305, 384 (2007).
L. Lu, Z.Y. Gao, B. Shen, F.J. Xu, S. Huang, Z.L. Miao, Y. Hao, Z.J. Yang, G.Y. Zhang, X.P. Zhang, J. Xu, and D.P. Yu, J. Appl. Phys. 104, 123525 (2008).
Y. Yao, Y. Ishikawa, Y. Sugawara, D. Yokoe, M. Sudo, N. Okada, and K. Tadatomo, Superlattices Microstruct. 99, 83 (2016).
P.B. Hirsch, A. Howie, P.B. Nicholson, D.W. Pashley, and M.J. Whelan, Electron Microscopy of Thin Crystals, 2nd ed. (Malabar: Krieger, 1977), pp. 247–275.
T. Sugahara, H. Sato, M.S. Hao, Y. Naoi, S. Kurai, S. Tottori, K. Yamashita, K. Nishino, L.T. Romano, and S. Sakai, Jpn. J. Appl. Phys. 37, L398 (1998).
M.A. Reshchikov and H. Morkoç, J. Appl. Phys. 97, 061301 (2005).
J.Y. Wang, Y. Oshima, Y.J. Cho, Y. Shi, and T. Sekiguchi, Superlattices Microstruct. 99, 77 (2016).
M. Albrecht, J.L. Weyher, B. Lucznik, I. Grzegory, and S. Porowski, Appl. Phys. Lett. 92, 231909 (2008).
J. Huang, K. Xu, Y.M. Fan, J.F. Wang, J.C. Zhang, and G.Q. Ren, Nanoscale Res. Lett. 9, 649 (2014).
J. Chen, W. Yi, T. Kimura, S. Takashima, M. Edo, and T. Sekiguchi, Appl. Phys. Express 12, 051010 (2019).
H.J. Leamy, J. Appl. Phys. 53, R51 (1982).
T. Sekiguchi and K. Sumino, Rev. Sci. Instrum. 66, 4277 (1995).
J. Chen, T. Sekiguchi, D. Yang, F. Yin, K. Kido, and S. Tsurekawa, J. Appl. Phys. 96, 5490 (2004).
J. Chen, T. Sekiguchi, J.Y. Li, S. Ito, W. Yi, and A. Ogura, Appl. Phys. Lett. 106, 102109 (2015).
J. Chen, T. Sekiguchi, N. Fukata, M. Takase, T. Chikyo, K. Yamabe, R. Hasunuma, Y. Akasaka, S. Inumiya, Y. Nara, and K. Yamada, Appl. Phys. Lett. 89, 22 (2006).
J. Chen and T. Sekiguchi, in Compendium of Surface and Interface Analysis, ed. By The Surface Science Society of Japan (Springer, Singapore, 2018), p. 149.
E.B. Yakimov, J. Phys. Condens. Matter 14, 13069 (2002).
E.B. Yakimov, A.Y. Polyakov, I.-H. Lee, and S.J. Pearton, J. Appl. Phys. 123, 161543 (2018).
W. Lee, H.J. Lee, S.H. Park, K. Watanabe, K. Kumagai, T. Yao, J.H. Chang, and T. Sekiguchi, J. Cryst. Growth 351, 83 (2012).
V. Voronenkov, N. Bochkareva, R. Gorbunove, P. Latyshev, Y. Lelikov, Y. Rebane, A. Tsyuk, A. Zubrilov, and Y. Shreter, Jpn. J. Appl. Phys. 52, 08JE14 (2013).
W. Yi, J. Chen, S. Higuchi, and T. Sekiguchi, Appl. Phys. Express 12, 051005 (2019).
L. Sang, B. Ren, M. Sumiya, M. Liao, Y. Koide, A. Tanaka, Y. Cho, Y. Harada, T. Nabatame, T. Sekiguchi, S. Usami, Y. Honda, and H. Amano, Appl. Phys. Lett. 111, 122107 (2017).
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This work was supported by the Ministry of Education, Culture, Sports, Science, and Technology (MEXT), Japan through its Program for research and development of next-generation semiconductor to realize energy-saving society.
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Chen, J., Yi, W., Kumar, A. et al. Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes. J. Electron. Mater. 49, 5196–5204 (2020). https://doi.org/10.1007/s11664-020-08081-2
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DOI: https://doi.org/10.1007/s11664-020-08081-2