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Gallium Phosphide Solar Cell Structures with Improved Quantum Efficiencies

  • Topical Collection: 61st Electronic Materials Conference 2019
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Abstract

Gallium phosphide (GaP) solar cell structures with improved quantum efficiencies were realized using a modified liquid phase epitaxy (LPE) technique and diodes formed using semi-transparent Schottky contacts. The improvement is due to the addition of a small amount of aluminum to the gallium and phosphorus containing LPE melt. The Al reduces the background concentration of oxygen in the melt, which is known to produce deep trap states in GaP. Additionally, it was found that by depositing an aluminum (Al)-rich AlGaP layer on top of the active GaP and then selectively etching it away, the surface morphology of the active layer was significantly improved. Thus, the modified LPE technique eliminates the major problem of meniscus lines associated with the standard LPE method.

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Acknowledgments

Funding was provided by U.S. Army (Grant No. W911NF1910130).

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of California, Davis, CA, 95616, USA

    Hui-Ying Siao, Ryan J. Bunk & Jerry M. Woodall

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  1. Hui-Ying Siao
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  2. Ryan J. Bunk
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  3. Jerry M. Woodall
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Correspondence to Hui-Ying Siao.

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Siao, HY., Bunk, R.J. & Woodall, J.M. Gallium Phosphide Solar Cell Structures with Improved Quantum Efficiencies. J. Electron. Mater. 49, 3435–3440 (2020). https://doi.org/10.1007/s11664-019-07848-6

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  • DOI: https://doi.org/10.1007/s11664-019-07848-6

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