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Co/(Ag-41.0 at.%Sb)1−xCox and Ni/(Ag-41.0 at.%Sb)1−xNix Interfacial Reactions

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Abstract

The Ag-41.0 at.%Sb alloy has a melting point at 485°C and is a suitable braze alloy for mid-temperature joining processes. Co and Ni are frequently used as barrier layer materials. The Co/(Ag-41.0 at.%Sb)1−xCox and Ni/(Ag-41.0 at.%Sb)1−xNix interfacial reactions at 550°C are studied. Two phases, CoSb and CoSb3, are formed in all Co/(Ag-41.0 at.%Sb)1−xCox couples for which the value of x is 0, 0.01, 0.03 and 0.05. CoSb is a thin layer and the reaction region with CoSb3 phase is a thick region in which granular CoSb3 is mixed with the liquid phase. Two phases, Ni5Sb2 and NiSb, are formed in Ni/(Ag-41.0 at.%Sb)1−xNix couples for which the value of x is 0, 0.01 and 0.05. Both Ni5Sb2/NiSb and NiSb/liquid interfaces are planar. The reaction rates in the Co/Ag-Sb and Ni/Ag-Sb couples are high, and the reaction rates in the Ni/Ag-Sb couples are even higher. Doping Co decreases the reaction rates in the Co/(Ag-41.0 at.%Sb)1−xCox couples, but doping Ni has no noticeable effect upon the reaction rates for the Ni/(Ag-41.0 at.%Sb)1−xNix couples.

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References

  1. R.J. Klein Wassink, Soldering in Electronics, 2nd ed. (British Isles: Electrochemical Publications Limited, 1989).

    Google Scholar 

  2. K.N. Subramanian, Lead-Free Solders: Materials Reliability for Electronics (West Sussex: Wiley, 2012).

    Book  Google Scholar 

  3. M. Schwartz, Brazing: For the Engineering Technologist (London: Chapman & Hall, 1995).

    Google Scholar 

  4. S.-W. Chen, Mater. Chem. Phys. 33, 271 (1993).

    Article  Google Scholar 

  5. S.-W. Chen, L.-C. Chen, and J.-C. Wang, J. Alloys Compd. 694, 93 (2017).

    Article  Google Scholar 

  6. C.-S. Oh, J.-H. Shim, B.-J. Lee, and G.N. Lee, J. Alloys Compd. 238, 155 (1996).

    Article  Google Scholar 

  7. W.-J. Zhu, H.-S. Liu, J.-S. Wang, H.-Q. Dong, and Z.-P. Jin, J. Alloys Compd. 481, 503 (2009).

    Article  Google Scholar 

  8. Y. Zhang, C. Li, Z. Di, and T. Geng, Calphad 32, 56 (2008).

    Article  Google Scholar 

  9. T. Shimozaki, K.S. Kim, T. Iwata, T. Okino, and C.G. Lee, Mater. Trans. 43, 2609 (2002).

    Article  Google Scholar 

  10. F.J.J. van Loo, Prog. Solid State Chem. 20, 47 (1990).

    Article  Google Scholar 

Download references

Acknowledgments

The authors acknowledge the financial support of Ministry of Science and Technology (Grant MOST 103-2221-E-007-021-MY3) and High Entropy Materials Center in National Tsing Hua University.

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Authors and Affiliations

  1. Department of Chemical Engineering, National Tsing Hua University, Hsinchu, Taiwan

    Sinn-wen Chen, Ying-Shuo Peng & Ling-chieh Chen

  2. High Entropy Materials Center, National Tsing Hua University, Hsinchu, Taiwan

    Sinn-wen Chen

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  1. Sinn-wen Chen
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  2. Ying-Shuo Peng
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  3. Ling-chieh Chen
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Correspondence to Sinn-wen Chen.

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Chen, Sw., Peng, YS. & Chen, Lc. Co/(Ag-41.0 at.%Sb)1−xCox and Ni/(Ag-41.0 at.%Sb)1−xNix Interfacial Reactions. J. Electron. Mater. 48, 5743–5756 (2019). https://doi.org/10.1007/s11664-019-07385-2

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  • DOI: https://doi.org/10.1007/s11664-019-07385-2

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