Abstract
The morphology of GaN crystals grown in a temperature range of 800–860°C by the Na flux liquid phase epitaxial (LPE) method was observed by the optical microscope and the scanning electron microscope (SEM). Significant changes in the morphology of as-grown GaN crystals occurred with the growth temperature being increased. Differing from the crystals grown at the temperature lower than 840°C, the side morphology of crystals grown at 850°C and 860°C presented a rather integrated and flat facet observed along the m-direction. In addition, there were two distinct growth stages with lateral equilibrium epitaxial growth (Stage I) and c direction growth (Stage II) during the epitaxial growth process. Under the growth temperature of 850°C and keeping nitrogen pressure 3 MPa for 150 h, the as-grown GaN crystal had relatively higher crystalline quality, the thickness and yield of GaN-LPE crystal were about 622 μm and 15.2%, respectively. The dislocation density in the GaN crystal was also remarkably reduced to the order of 105–106 cm−2. Therefore, the continuous lateral equilibrium epitaxial growth (stage I) is feasible to achieve a large size and high quality GaN single crystal.
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Acknowledgments
This work was financially supported by International Science and Technology Cooperation Program of China under Grant No. 2014DFR51240, the 111 project (B14040), the National Basic Research Program of China (973 Program) under Grant No. 2015CB654602 and the National Natural Science Foundation of China under Grant Nos. 51761145024 and 61627812.
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Hao, H., Wu, X., Li, Z. et al. Effects of Growth Temperature on Morphology of GaN Crystals by Na Flux Liquid Phase Epitaxial Method. J. Electron. Mater. 48, 3570–3578 (2019). https://doi.org/10.1007/s11664-019-07111-y
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DOI: https://doi.org/10.1007/s11664-019-07111-y