Abstract
Although there are several kinds of thermal interfacial materials used in the electronic semiconductor industry, such as thermal grease, thermal glue, thermal gap filler, thermal pad and thermal adhesive, the problem of heat dissipation still remains a challenge. In this context, chemical vapor deposition of graphene on copper foils in vacuum has recently become considered as a wonderful hybrid material (graphene/copper/graphene) for more demanding thermal management applications, thanks to the unique properties of graphene in comparison with other materials. We found that the thermal properties of copper films change as graphene is deposited on top of the copper surface. Especially, a single atomic plane of graphene can significantly increase the film’s thermal conductivity. Our graphene on copper foil was analyzed and measured by optical microscopy, Raman spectroscopy, scanning electron microscopy and heat transfer technique. This stack of graphene/copper/graphene materials may play a very important role as a potential material with superior thermal conductivity to replace traditional copper shim thermal pads in current electronic devices.
Similar content being viewed by others
References
W. Yu, J. Zhao, M. Wang, Y. Hu, L. Chen, and H. Xie, Nanoscale Res. Lett. 10, 113 (2015).
Y. Ni, K.H. Le, Y. Chalopin, J. Bai, P. Lebarny, L. Divay, and S. Volz, Appl. Phys. Lett. 100, 193118 (2012).
Y. J. Lee, in 12th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, pp. 1–8 (2010).
G. Langer, M. Leitgeb, J. Nicolics, M. Unger, H. Hoschopf, and F.P. Wenzl, J. Microelectron. Electron. Packag. 11, 104 (2014).
P. Teertstra, in Proceedings of IPACK2007, pp. 381–388 (2007).
M. Golio, Proc. IEEE 103, 11 (2015).
K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, and A.A. Firsov, Science 306, 666 (2004).
C. Lee, X. Wei, J.W. Kysar, and H. James, Science 321, 385 (2008).
K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, I.V. Katsnelson, I.V. Grigorieva, S.V. Dubonos, and A.A. Firsov, Nature 438, 197 (2005).
K.I. Bolotin, K.J. Sikes, J. Hone, H.L. Stormer, and P. Kim, Phys. Rev. Lett. 101, 096802 (2008).
A.K. Geim and K.S. Novoselov, Nat. Mater. 6, 183 (2007).
E. Pallecchi, F. Lafont, V. Cavaliere, F. Schopfer, D. Mailly, W. Poirier, and A. Ouerghi, Sci. Rep. 4, 4558 (2014).
K. Bolotin, K. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, and H. Stormer, Solid State Commun. 146, 351 (2008).
A.A. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Teweldebrhan, F. Miao, and C.N. Lau, Nano Lett. 8, 902 (2008).
K.L. Chavez and D.W. Hess, J. Electrochem. Soc. 148, 640 (2001).
S. Zhu, Q. Li, Q. Chen, W. Liu, X. Li, J. Zhang, Q. Wang, X. Wang, and H. Liu, RSC Adv. 4, 32941 (2014).
T. Kaplas, A. Zolotukhin, and Y. Svirko, Opt. Express 19, 17226 (2011).
C. Jia, J. Jiang, L. Gan, and X. Guo, Sci. Rep. 2, 707 (2012).
K. Celebi, M.T. Cole, J.W. Choi, F. Wyczisk, P. Legagneux, N. Rupesinghe, J. Robertson, K.B.K. Teo, and H.G. Park, Nano Lett. 13, 967 (2013).
A.C. Ferrari and J. Robertson, Phys. Rev. B 61, 14095 (2000).
A.C. Ferrari, J.C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K.S. Novoselov, S. Roth, and A.K. Geim, Phys. Rev. Lett. 97, 187401 (2006).
M.A. Pimenta, G. Dresselhaus, M.S. Dresselhaus, L.G. Cancado, A. Jorio, and R. Saito, Phys. Chem. Chem. Phys. 9, 1276 (2007).
F. Libisch, S. Rotter, and J. Burgdorfer, Phys. Status Solid B 248, 2598 (2011).
L.M. Malard, M.A. Pimenta, G. Dresselhaus, and M.S. Dresselhaus, Phys. Rep. 473, 51 (2009).
A. Reina, X. Jia, J. Ho, D. Nezich, H. Son, V. Bulovic, M.S. Dresselhaus, and J. Kong, Nano Lett. 9, 30 (2009).
X. Dong, P. Wang, W. Fang, C.Y. Su, Y.H. Chen, L.J. Li, W. Huang, and P. Chen, Carbon 49, 3672 (2011).
A. Celzard, J.F. Mareche, G. Furdin, and S. Puricelli, J. Phys. D: Appl. Phys. 33, 3094 (2000).
R. Hienonen , J. Keskinen and T. Koivuluoma, VTT Publications 619, Espoo (2006).
Acknowledgments
Trung T. PHAM would like to thank the Vietnam National Foundation for Science and Technology Development (NAFOSTED) for supporting the grant to develop this project (Code Number: 103.02-2016.84). The authors would like to thank the Center of Research and Development from Saigon Hi-Tech Park and the Ho Chi Minh City University of Technology and Education for creating good conditions to perform the project.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Pham, T.T., Huynh, T.H., Do, Q.H. et al. Stack of Graphene/Copper Foils/Graphene by Low-Pressure Chemical Vapor Deposition as a Thermal Interface Material. J. Electron. Mater. 47, 7476–7483 (2018). https://doi.org/10.1007/s11664-018-6689-4
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-018-6689-4