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Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors

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Abstract

In this study, radio-frequency (RF) magnetron sputtering was used to deposit a 50 nm indium aluminum zinc oxide (IAZO) channel layer, following which a bottom-gate thin-film transistor (TFT) was fabricated. The oxygen ratio for the IAZO thin film was modulated from 0% to 6%. The film remained amorphous at annealing temperatures of 300°C and 500°C. Analysis of optical properties (performed via UV–Vis spectroscopy) shows that the bandgap increased from 5.24 eV to 5.32 eV when the oxygen flow ratio increased from 0% to 4%. The bandgap decreased to 5.19 eV when the flow ratio reached 6%. An appropriate variation of the O2/Ar flow ratio filled oxygen vacancies and improved the electrical properties; however, a higher oxygen ratio led to the regeneration of oxygen vacancies and degraded the device. TFTs with an oxygen flow ratio of 2% had a high mobility of 5.67 cm2/Vs, Ion/Ioff 3.37 × 106, and S.S. 0.61 V/dec.

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Acknowledgments

This work was supported by the Ministry of Science and Technology under contract number MOST 106-2221-E-006-178 and 105-2221-E-006-118. This work was also supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan, and by the Advanced Optoelectronic Technology Center, National Cheng Kung University, for projects from the Ministry of Education.

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Authors and Affiliations

  1. Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, 70101, Taiwan

    Tien-Hung Cheng, Sheng-Po Chang & Shoou-Jinn Chang

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  1. Tien-Hung Cheng
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  2. Sheng-Po Chang
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  3. Shoou-Jinn Chang
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Correspondence to Sheng-Po Chang.

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Cheng, TH., Chang, SP. & Chang, SJ. Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors. J. Electron. Mater. 47, 6923–6928 (2018). https://doi.org/10.1007/s11664-018-6618-6

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  • DOI: https://doi.org/10.1007/s11664-018-6618-6

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