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Transparent Thin-Film Transistors Based on c-Axis Oriented, Vertically Aligned ZnO Nanorod Arrays via Solution Processing

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Abstract

A bottom-gate, top-contact transparent thin film transistor (TFT) based on c-axis oriented, vertically aligned ZnO nanorod arrays was fabricated on glass substrates via solution processing, in which ZnO nanorod arrays were synthesized on ZnO seed layers through a simple hydrothermal route. This TFT used SiO2 and indium tin oxide as the gate insulator and gate electrode, respectively. The source and drain electrodes were formed by radio frequency sputtered Au through a shadow mask. This ZnO TFT exhibited n-channel enhancement behavior with a field effective mobility of 3.86 cm2 V−1 s−1, a current on-to-off ratio of 65.5 and a threshold voltage of 1 V. Moreover, the ZnO TFT has a high transmittance of 80% in the visible spectrum. Our results demonstrate that hydrothermally grown, vertically aligned ZnO nanorod arrays are very promising for the fabrication of cost effective and high performance transparent thin-film transistors.

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Acknowledgements

Financial support from National Natural Science Foundation of China (Grant No. 51302096), China Scholarship Council (Grant No. 201606165006), the Fundamental Research Funds for the Central Universities (Grant Nos. 2017KFYXJJ039 and 2015TS051), the Hubei Provincial Natural Science Foundation of China (Grant No. ZRMS2017000370), the Fundamental Research Funds of Wuhan City (Grant No. 2016060101010075), and the Innovation Foundation of Shenzhen Government (Grant No. JCYJ20160429182959405) are acknowledged. HLL acknowledges partial support from the National Key Research and Development Program of China (Grant No. 2016YFB0402705). The authors thank the Analytical and Testing Center of Huazhong University of Science and Technology for making available the shared experimental facilities.

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Authors and Affiliations

  1. School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Hongshan District, Wuhan, 430074, Hubei, People’s Republic of China

    Chi Zhang, Yong Xia, Wei Hu, Mingyang Gao, Hongyang Zhang, Jianbing Zhang, Wei Luo, Yiping Huang & Daoli Zhang

  2. Engineering Research Centre for Functional Ceramics, The Ministry of Education, Huazhong University of Science and Technology, 1037 Luoyu Road, Hongshan District, Wuhan, 430074, Hubei, People’s Republic of China

    Chi Zhang, Yong Xia, Mingyang Gao, Hongyang Zhang, Jianbing Zhang, Wei Luo & Daoli Zhang

  3. Institute of Acoustics, Chinese Academy of Sciences, 21 North 4th Ring Road, Haidian District, Beijing, 100190, People’s Republic of China

    Xueling Li & Honglang Li

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  1. Chi Zhang
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Correspondence to Honglang Li or Daoli Zhang.

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Zhang, C., Xia, Y., Hu, W. et al. Transparent Thin-Film Transistors Based on c-Axis Oriented, Vertically Aligned ZnO Nanorod Arrays via Solution Processing. J. Electron. Mater. 47, 6091–6100 (2018). https://doi.org/10.1007/s11664-018-6471-7

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  • DOI: https://doi.org/10.1007/s11664-018-6471-7

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