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Structural, Electrical and Optical Properties of Sputtered-Grown InN Films on ZnO Buffered Silicon, Bulk GaN, Quartz and Sapphire Substrates

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Abstract

Indium nitride (InN) films were grown on Si (111), bulk GaN, quartz and sapphire substrates by radio frequency magnetron sputtering. Prior to the film deposition, a zinc oxide (ZnO) buffer layer was deposited on all the substrates. The x-ray diffraction patterns of InN films on ZnO-buffered substrates indicated c-plane-oriented films whereas the Raman spectroscopy results indicated A1 (LO) and E2 (high) modes of InN on all the substrates. The crystalline quality of InN was found to be better on sapphire and quartz than on the other substrates. The surface roughness of InN was studied using an atomic force microscope. The results indicated higher surface roughness of the film on sapphire as compared to the others; however, roughness of the film was lower than 8 nm on all the substrates. The electrical properties indicated higher electron mobility of InN (20.20 cm2/Vs) on bulk GaN than on the other substrates. The optical band gap of InN film was more than 2 eV in all the cases and was attributed to high carrier concentration in the film.

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Authors and Affiliations

  1. School of Physics, Universiti Sains Malaysia, 11800, Penang, Malaysia

    Umar Bashir & Naser M. Ahmed

  2. Institute of Nano Optoelectronic Research and Technology (INOR), Universiti Sains Malaysia, 11800, Penang, Malaysia

    Zainuriah Hassan

  3. Centre for Advanced Studies in Physics, GC University, Lahore, Pakistan

    Naveed Afzal

Authors
  1. Umar Bashir
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  2. Zainuriah Hassan
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  3. Naser M. Ahmed
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  4. Naveed Afzal
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Correspondence to Umar Bashir.

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Bashir, U., Hassan, Z., Ahmed, N.M. et al. Structural, Electrical and Optical Properties of Sputtered-Grown InN Films on ZnO Buffered Silicon, Bulk GaN, Quartz and Sapphire Substrates. J. Electron. Mater. 47, 4875–4881 (2018). https://doi.org/10.1007/s11664-018-6386-3

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  • DOI: https://doi.org/10.1007/s11664-018-6386-3

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