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Effects of GaAs Surface Treatment Processes on Photocurrent Properties of Cs/p-GaAs (001) Fabricated Using a MOCVD–NEA Multichamber System

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Abstract

The effects of surface treatment processes of p-GaAs (001) on the photocurrent properties of Cs/p-GaAs (001) obtained during Cs evaporation have been investigated using a metal–organic chemical vapor deposition (MOCVD)–negative electron affinity (NEA) multichamber system comprising an MOCVD chamber, load–lock chamber, and NEA surface-activation chamber. Samples were transferred from the MOCVD chamber to the NEA surface-activation chamber without air exposure. Moreover, the air exposure time before Cs evaporation was controlled by opening the load–lock chamber. Almost the same peak photocurrents were observed for samples fabricated using only tertiarybutylarsine or H2 supply after thermal cleaning of the p-GaAs substrate. However, tertiarybutylphosphine supply after thermal cleaning of the p-GaAs substrate degraded its surface morphology and decreased its peak photocurrent. The peak photocurrent decreased monotonically with lengthening air exposure time. Moreover, the start time of the rise in photocurrent was delayed monotonically with lengthening air exposure time. These experimental results reveal that the surface treatment process of p-GaAs (001) applied before Cs evaporation is an important factor controlling the photocurrent properties.

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Acknowledgments

This work was supported in part by SENTAN-JST and the Aoyama Gakuin University-Supported ‘‘Early Eagle Program.’’ The authors thank Associate Prof. Tomohiro Nishitani for fruitful discussion on the photocurrent measurements.

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Authors and Affiliations

  1. Department of Electrical Engineering and Electronics, College of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo-ku, Sagamihara-shi, Kanagawa, 252-5258, Japan

    Shingo Fuchi, Takayoshi Sato, Mikiya Idei, Yuuki Akiyama & Yasushi Nanai

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  1. Shingo Fuchi
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  2. Takayoshi Sato
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  4. Yuuki Akiyama
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Correspondence to Shingo Fuchi.

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Fuchi, S., Sato, T., Idei, M. et al. Effects of GaAs Surface Treatment Processes on Photocurrent Properties of Cs/p-GaAs (001) Fabricated Using a MOCVD–NEA Multichamber System. J. Electron. Mater. 48, 1679–1685 (2019). https://doi.org/10.1007/s11664-018-06919-4

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  • DOI: https://doi.org/10.1007/s11664-018-06919-4

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