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Investigating the Mobility of Trilayer Graphene Nanoribbon in Nanoscale FETs

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Abstract

The aim of the present paper is to investigate the scaling behaviors of charge carrier mobility as one of the most remarkable characteristics for modeling of nanoscale field-effect transistors (FETs). Many research groups in academia and industry are contributing to the model development and experimental identification of multi-layer graphene FET-based devices. The approach in the present work is to provide an analytical model for carrier mobility of tri-layer graphene nanoribbon (TGN) FET. In order to do so, one starts by identifying the analytical modeling of TGN carrier velocity and ballistic conductance. At the end, a model of charge carrier mobility with numerical solution is analytically derived for TGN FET, in which the carrier concentration, temperature and channel length characteristics dependence are highlighted. Moreover, variation of band gap and gate voltage during the proposed device operation and its effect on carrier mobility is investigated. To evaluate the nanoscale FET performance, the carrier mobility model is also adopted to obtain the I–V characteristics of the device. In order to verify the accuracy of the proposed analytical model for TGN mobility, it is compared to the existing experimental data, and a satisfactory agreement is reported for analogous ambient conditions. Moreover, the proposed model is compared with the published data of single-layer graphene and bi-layer graphene, in which the obtained results demonstrate significant insights into the importance of charge carrier mobility impact in high-performance TGN FET. The work presented here is one step towards an applicable model for real-world nanoscale FETs.

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Authors and Affiliations

  1. Department of Electrical Engineering, Amirkabir University of Technology, 424 Hafez Ave., Tehran, Iran

    Meisam Rahmani, Hassan Ghafoori Fard & Vali Varmazyari

  2. Physics Department, Nanotechnology Research Center, Nanoelectronic Group, Urmia University, Urmia, 57147, Iran

    Mohammad Taghi Ahmadi

  3. Electrical Engineering Department, Shahed University, Tehran, 159-18155, Iran

    Saeideh Rahbarpour

  4. Photonics Engineering Group, Amirkabir University of Technology, 424 Hafez Ave., Tehran, Iran

    Hamidreza Habibiyan

  5. Department of Electrical Engineering, Islamic Azad University Qazvin Branch, Qazvin, Iran

    Komeil Rahmani

Authors
  1. Meisam Rahmani
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  2. Hassan Ghafoori Fard
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  3. Mohammad Taghi Ahmadi
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  4. Saeideh Rahbarpour
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  5. Hamidreza Habibiyan
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  6. Vali Varmazyari
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  7. Komeil Rahmani
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Correspondence to Hassan Ghafoori Fard.

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Rahmani, M., Ghafoori Fard, H., Ahmadi, .T. et al. Investigating the Mobility of Trilayer Graphene Nanoribbon in Nanoscale FETs. J. Electron. Mater. 46, 6188–6194 (2017). https://doi.org/10.1007/s11664-017-5651-1

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  • DOI: https://doi.org/10.1007/s11664-017-5651-1

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