Abstract
This paper presents an overview and analysis of our earlier obtained experimental results on the dependences of kinetic properties of single PbSe quantum wells and PbSe-based superlattices on the PbSe layer thickness d. The observed oscillatory character of these dependences is attributed to quantum size effects due to electron or hole confinement in quantum wells. Some general regularities and factors that determine the character of these quantum size effects are established. The influence of the oxidation processes and doping on the d-dependences of the transport properties is revealed. A periodic change in the conductivity type related to quantum size oscillations is detected. It is shown that the experimentally determined values of the oscillation period Δd are in good agreement with the results of theoretical calculations based on the model of a rectangular quantum well with infinitely high walls, taking into account the dependence of the Fermi energy ε F on d and the availability of subbands below ε F. It is established that the Δd value for the superlattices is practically equal to the Δd value observed for the single PbSe thin film.
Similar content being viewed by others
References
J.H. Davies, The Physics of Low-Dimensional Semiconductors. An Introduction (New York: Cambridge University Press, 1998).
M.J. Kelley, Low-Dimensional Semiconductors: Materials, Physics, Technology, Devices (Oxford: Clarendon, 1995).
I.M. Lifshits and A.M. Kosevich, Izv. AN USSR. Ser. Fiz. 19, 395 (1955).
Y.I. Ravich, B.A. Efimova, and I.A. Smirnov, Semiconducting Lead Chalcogenides (New York: Plenum, 1970).
B.A. Tavger and V.Ya. Demihovskii, Usp. Fiz. Nauk. 96, 61 (1968).
V.N. Ogrin, M.I. Lutskii, and O. Elinson, Pis’ma v ZhETF 3, 114 (1966).
O.N. Filatov and I.A. Karpovich, Pis’ma v ZhETF 10, 142 (1969).
L. Zdanowicz, W. Zdanowicz, and G. Pocztowski, Thin Solid Films 28, 345 (1975). doi:10.1016/0040-6090(75)90125-X.
D.M. Rowe, CRC Handbook of Thermoelectrics (Boca Raton: CRC Press, 1995).
L.D. Hicks and M.S. Dresselhaus, Phys. Rev. B 47, 12727 (1993). doi:10.1103/PhysRevB.47.12727.
T.C. Harman, P.J. Taylor, D.L. Spears, and M.P. Walsh, in Proceedings of 18th International Conference on Thermoelectrics, Baltimore, USA, 1999, p. 280. doi:10.1109/ICT.1999.843386.
E.I. Rogacheva, T.V. Tavrina, S.N. Grigorov, O.N. Nashchekina, V.V. Volobuev, A.G. Fedorov, K.A. Nasedkin, and M.S. Dresselhaus, J. Electron. Mater. 31, 298 (2002). doi:10.1007/s11664-002-0147-y.
E.I. Rogacheva, T.V. Tavrina, O.N. Nashchekina, S.N. Grigorov, AYu Sipatov, V.V. Volobuev, M.S. Dresselhaus, and G. Dresselhaus, Phys. E 17, 310 (2003). doi:10.1016/S1386-9477(02)00819-6.
E.I. Rogacheva, O.N. Nashchekina, S.I. Ol’khovskaya, and M.S. Dresselhaus, J. Thermoelectr. 4, 25 (2012).
E.I. Rogacheva, T.V. Tavrina, O.N. Nashchekina, S.N. Grigorov, K.A. Nasedkin, M.S. Dresselhaus, and S.B. Cronin, Appl. Phys. Lett. 80, 2690 (2002). doi:10.1063/1.1469677.
E.I. Rogacheva, T.V. Tavrina, O.N. Nashchekina, S.N. Grigorov, K.A. Nasedkin, M.S. Dresselhaus, and S.B. Cronin, Virtual J. Nanoscale Sci. Technol. 5, 16 (2002).
E.I. Rogacheva, O.N. Nashchekina, T.V. Tavrina, M.A. Us, M.S. Dresselhaus, S.B. Cronin, and O. Rabin, Phys. E 17, 313 (2003). doi:10.1016/S1386-9477(02)00820-2.
S.I. Menshikova, E.I. Rogacheva, AYu Sipatov, S.I. Krivonogov, and P.V. Mateychenko, J. Thermoelectr. 2, 22 (2015).
S.I. Ol’khovskaya, E.I. Rogacheva, and AYu Sipatov, Metallofiz. Noveishie Tekhnol. 33, 213 (2011).
S. Ol’khovskaya and O. Rogachova, Visnyk Lviv Univ. Ser. Phys. 47, 88 (2012).
E.I. Rogacheva, O.N. Nashchekina, AYu Sipatov, A.G. Fedorov, S.N. Grigorov, T.V. Tavrina, and M.S. Dresselhaus, Phys. Status Solidi C 6, 1149 (2009). doi:10.1002/pssc.200881229.
E.I. Rogacheva, O.N. Nashchekina, S.I. Ol’khovskaya, A.Y. Sipatov, and M.S. Dresselhaus, in Proceedings of 31st International Conference on the Physics of Semiconductors, ICPS 2012, Zurich, Switzerland, 1566, 2013, pp. 207–208. doi:10.1063/1.4848358.
M.H. Brodsky and J.N. Zemel, Phys. Rev. 155, 780 (1967). doi:10.1103/PhysRev.155.780.
R.F. Egerton and C. Juhasz, Thin Solid Films 4, 239 (1969). doi:10.1016/0040-6090(69)90070-4.
G.F. McLane and J.N. Zemel, Thin Solid Films 7, 229 (1971). doi:10.1016/0040-6090(71)90070-8.
E. Rogacheva, O. Vodorez, O. Nashchekina, A. Sipatov, A. Fedorov, and S. Olkhovskaya, J. Electron. Mater. 39, 2085 (2010).
V.D. Dymnikov, Phys. Solid State 53, 901 (2011).
M.P. Singh and C.M. Bhandari, Solid State Commun. 133, 29 (2005).
L. Kowalczyk, and J. Sadowski, et al., Acta Phys. Pol. A 94, 397 (1998).
S. Wroteka, et al., Acta Phys. Pol. A 103, 629 (2003).
S. Wroteka, A. Morawskia, and Z. Tkaczyk, et al., Acta Phys. Pol. A 105, 815 (2004).
Z.Y. Zhang, Q. Niu, and C.-K. Shih, Phys. Rev. Lett. 80, 5381 (1998).
J.-H. Cho, K.S. Kim, C.T. Chan, and Z. Zhang, Phys. Rev. B 63, 113408 (2001).
Acknowledgement
This work was supported by the Ukrainian Ministry of Education and Science (Project No. M3925).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Rogacheva, E.I., Nashchekina, O.N. & Menshikova, S.I. Size Effects in Transport Properties of PbSe Thin Films. J. Electron. Mater. 46, 3842–3850 (2017). https://doi.org/10.1007/s11664-017-5481-1
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-017-5481-1