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Theoretical Study and Simulations of an InGaN Dual-Junction Solar Cell

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Abstract

This study aims to determine the optimal configuration of the dual-junction InGaN solar cell. Several parameters of the dual-InGaN-junction solar cell have been investigated as the band gap combination and the thicknesses of the layers. Physical models and the optical properties of the In x Ga1−x N according to the indium content have been used. The dual-junction solar cell has been designed and simulated for each chosen band gap combination. The current densities drawn from the sub-cells were matched by adjusting their emitter layers thicknesses. The best conversion efficiency obtained for the optimized dual-junction In0.49Ga0.51N/In0.74Ga0.26N solar cell, under standard conditions, was 34.93% which corresponds to the band gap combination of 1.73 eV/1.13 eV. The short-circuit current density and the open circuit voltage obtained from the tandem cell In0.49Ga0.51N/In0.74Ga0.26N are respectively, 21.3941 mA/cm2 and 1.9144 V. The current mismatch was 0.057%. The effects of the front and back layers thicknesses of the top and bottom cells on the efficiency were also studied. Furthermore, the electrical characteristics of the dual-junction solar cell and its sub-cells were also discussed.

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Acknowledgement

This work was financially supported by the Algerian Ministry for High Education and Scientific Research. We would like to thank Dr. Abderrahmane Diaf for his valuable advice on the writing of this article.

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Authors and Affiliations

  1. Laboratoire LIMOSE, Université M’hamed Bougara de Boumerdès, 35000, Boumerdès, Algeria

    A. Mesrane & F. Rahmoune

  2. Unité de Développement des Equipements Solaires(UDES), Centre de Développement des Energies Renouvelables (CDER), Route Nle No. 11, BP 386, Bou Ismaïl, 42415, Tipaza, Algeria

    A. Mahrane

  3. Laboratoire d’Electronique Quantique, Faculté de Physique, USTHB, El Alia BP 32, Bab Ezzouar, 16111, Alger, Algeria

    A. Oulebsir

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  1. A. Mesrane
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  2. A. Mahrane
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  4. A. Oulebsir
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Correspondence to A. Mesrane.

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Mesrane, A., Mahrane, A., Rahmoune, F. et al. Theoretical Study and Simulations of an InGaN Dual-Junction Solar Cell. J. Electron. Mater. 46, 1458–1465 (2017). https://doi.org/10.1007/s11664-016-5176-z

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  • DOI: https://doi.org/10.1007/s11664-016-5176-z

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