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Emission Properties of Porous Silicon Electron Emitters Formed by Pulsed Anodic Etching

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Abstract

Porous silicon (PS) layers were formed by pulsed anodic etching and subsequently processed by electrochemical oxidization (ECO) and high-pressure water vapor annealing (HWA), and their morphologies and oxidation degrees were analyzed. The electron emitters based on these PS layers were fabricated, and their emission properties were investigated. The experimental results show that a PS layer formed by pulsed anodic etching has a better pore-diameter homogeneity in the longitudinal direction, and it can obtain good oxidation quality more easily by the combined treatment of ECO and HWA. The as-formed PS electron emitters have better emission properties in comparison with those based on PS layers prepared by constant-current anodic etching.

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References

  1. A. Kojima and N. Koshida, Appl. Phys. Lett. 86, 022102-1 (2005).

    Article  Google Scholar 

  2. T. Ichihara, T. Hatai, and N. Koshida, J. SID 18, 223 (2010).

    Google Scholar 

  3. N. Mori, H. Minari, S. Uno, H. Mizuta, and N. Koshida, Appl. Phys. Lett. 98, 062104-1 (2011).

    Article  Google Scholar 

  4. T. Ohta, A. Kojima, H. Hirakawa, T. Iwamatsu, and N. Koshida, J. Vac. Sci. Technol., B 23, 2336 (2005).

    Article  Google Scholar 

  5. T. Komoda, T. Ichihara, Y. Honda, T. Hatai, Y. Takegawa, Y. Watabe, K. Aizawa, V. Vezin, and N. Koshida, J. SID 12, 29 (2004).

    Google Scholar 

  6. I.H. Jang, J.E. Kim, G.H. Ryu, and S.Y. Choi, Mol. Cryst. Liq. Cryst. 499, 160 (2009).

    Article  Google Scholar 

  7. T. Komoda, Y. Honda, T. Ichihara, T. Hatai, Y. Takegawa, Y. Watabe, K. Aizawa, V. Vezin, and N. Koshida, in Society for Information Display 2002 Inernational Symposium, (2002), pp. 1128–1131.

  8. X. Sheng, A. Kojima, T. Komoda, and N. Koshida, J. Vac. Sci. Technol., B 19, 64 (2001).

    Article  Google Scholar 

  9. Y.J. Zhang, X.N. Zhang, W.J. Wang, and C.L. Liu, J. Nanosci. Nanotechnol. 12, 6548 (2012).

    Article  Google Scholar 

  10. T. Ichihara, T. Hatai, K. Aizawa, T. Komoda, A. Kojima, and N. Koshida, J. Vac. Sci. Technol., B 22, 57 (2004).

    Article  Google Scholar 

  11. T. Ichihara, T. Baba, T. Komoda, and N. Koshida, J. Vac. Sci. Technol., B 22, 1372 (2004).

    Article  Google Scholar 

  12. T. Ohta, A. Kojima, and N. Koshida, J. Vac. Sci. Technol., B 25, 524 (2007).

    Article  Google Scholar 

  13. T. Ichihara, Y. Honda, T. Baba, T. Komoda, and N. Koshida, J. Vac. Sci. Technol., B 22, 1784 (2004).

    Article  Google Scholar 

  14. T. Ichihara, Y. Honda, T. Baba, Y. Takegawa, Y. Watabe, T. Hatai, K. Aizawa, T. Komoda, V. Vezin, and N. Koshida, in The Ninth International Display Workshops, (2002), pp. 1033–1036.

  15. S.K. Han, S.I. Kwon, S.C. Bae, S.Y. Choi, in The 11th International Display Workshops, (2004), pp. 1233–1236.

  16. V. Lehmann and U. Gösele, Appl. Phys. Lett. 58, 856 (1991).

    Article  Google Scholar 

  17. A. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, F. Muller, and J.C. Oberlin, J. Electrochem. Soc. 138, 3450 (1991).

    Article  Google Scholar 

  18. R.L. Smith and S.D. Collins, J. Appl. Phys. 71, R1 (1992).

    Article  Google Scholar 

  19. X.Y. Hou, H.L. Fan, L. Xu, F.L. Zhang, M.Q. Li, M.R. Yu, and X. Wang, Appl. Phys. Lett. 68, 2323 (1996).

    Article  Google Scholar 

  20. H.L. Fan, X.Y. Hou, Z.S. Li, F.L. Zhang, M.R. Yu, and X. Wang, Chin. J. Semicond. 16, 113 (1995).

    Google Scholar 

  21. W.B. Hu, X.L. Zhao, J.L. Fan, S.L. Wu, and J.T. Zhang, J. Porous Mater. 22, 761 (2015).

    Article  Google Scholar 

  22. W. Luo, W.B. Hu, Z. Yang, Z.X. Song, and H.Y. Wu, in Asia Display 2011, (2011), pp. 693–696.

    Google Scholar 

Download references

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Authors and Affiliations

  1. Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, No. 28, Xianning West Road, Xi’an, 710049, China

    W. B. Hu, W. Zhao, J. L. Fan, S. L. Wu & J. T. Zhang

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  1. W. B. Hu
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  2. W. Zhao
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  3. J. L. Fan
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  4. S. L. Wu
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  5. J. T. Zhang
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Correspondence to W. B. Hu.

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Hu, W.B., Zhao, W., Fan, J.L. et al. Emission Properties of Porous Silicon Electron Emitters Formed by Pulsed Anodic Etching. J. Electron. Mater. 46, 895–902 (2017). https://doi.org/10.1007/s11664-016-4995-2

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  • DOI: https://doi.org/10.1007/s11664-016-4995-2

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