Abstract
To further enhance the thermoelectric (TE) properties of higher manganese silicides (HMSs), dissipation of layered precipitates of MnSi phase as well as optimization of hole carrier concentration are critical. We have prepared a lightly vanadium-substituted solid solution of HMS, (Mn1−x V x )Si γ , by a melt growth method. A 2% substitution of manganese with vanadium is found to dissipate MnSi precipitates effectively, resulting in a substantial increase in the electrical conductivity from 280 S/cm to 706 S/cm at 800 K. The resulting TE power factor reaches 2.4 mW/K2-m at 800 K, more than twice that of the V-free sample. The total thermal conductivity did not change significantly with increasing x owing to a reduction of the lattice contribution. As a consequence, the dimensionless figure of merit zT of the melt-grown samples increased from 0.26 ± 0.01 for x = 0 to 0.59 ± 0.01 for x = 0.02 at around 800 K.
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Acknowledgements
This work is based on results obtained from a project commissioned by the New Energy and Industrial Technology Development Organization (NEDO) and a cooperative program of the CRDAM-IMR, Tohoku University. The authors thank Ms. Y. Oide and Ms. M. Yamashita for their technical assistance.
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Miyazaki, Y., Hamada, H., Hayashi, K. et al. Crystal Structure and Thermoelectric Properties of Lightly Vanadium-Substituted Higher Manganese Silicides (Mn1−x V x )Si γ ). J. Electron. Mater. 46, 2705–2709 (2017). https://doi.org/10.1007/s11664-016-4937-z
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DOI: https://doi.org/10.1007/s11664-016-4937-z