Abstract
Three lead chalcogenide films, PbTe, PbSe, and PbS, with a high structural quality were grown by pulsed lased deposition (PLD). The films were grown on single crystal substrates (Si, KCl, Al2O3) and on Si covered with a Si3N4 buffer layer. The Si3N4 layer latter facilitated the lead chalcogenide layer nucleation during the first growth stages and resulted in a more homogeneous surface morphology and a lower surface roughness. The surface geometry (roughness) of the films grown on Si3N4 was studied by means of the power spectral density analysis. Different growth modes, ranging from plasma plume condensation to bulk diffusion, resulting in observed film morphologies were identified. The investigations were complemented by electrical characterization of the chalcogenide films.
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B. Weng, J. Qiu, L. Zhao, Z. Yuan, C. Chang, and Z. Shi, Proc. SPIE 8993, 899311 (2013).
J. Wang, T. Zens, J. Hu, P. Becla, A.M. Agarwal, and L.C. Kimerling, Proc. SPIE 8034, 80340K (2011).
V. Kasiyan, Z. Dashevsky, C.M. Schwarz, M. Shatkhin, E. Flitsiyan, L. Chernyak, and D. Khokhlov, J. Appl. Phys. 112, 086101 (2012).
C. Sierra, M.C. Torquemada, G. Vergara, M.T. Rodrigo, C. Gutiérrez, G. Pérez, I. Génova, I. Catalán, L.J. Gómez, V. Villamayor, M. álvarez, D. Fernández, M.T. Magaz, and R.M. Almazán, Sens. Actuators B 190, 464 (2014).
M.C. Torquemada, V. Villamayor, L.J. Gómez, G. Vergara, M.T. Rodrigo, G. Pérez, I. Génova, I. Catalán, D. Fernández, R.M. Almazán, M. álvarez, C. Sierra, C.M. Gutiérrez, M.T. Magaz, and J. Plaza, Sens. Actuators A 199, 297 (2013).
B. Weng, J. Qiu, L. Zhao, C. Chang, and Z. Shi, Appl. Phys. Lett. 104, 121111 (2014).
J. Wang, J. Hu, P. Becla, A.M. Agarwal, and L.C. Kimerling, J. Appl. Phys. 110, 083719 (2011).
S. Kouissa, A. Djemel, M.S. Aida, and M.A. Djouadi, Sens. Transducers 193, 106 (2015).
YuI Ravich, B.A. Efimova, and I.A. Smirnov, Semiconducting Lead Chalcogenides (New York: Plenum Press, 1970).
I.O. Rudyi, I.V. Kurilo, M.S. Frugynskyj, M. Kuzma, J. Zawislak, and I.S. Virt, Appl. Surf. Sci. 154–155, 206 (2000).
I.S. Virt, T.P. Shkumbatyuk, I.V. Kurilo, I.O. Rudyi, T. Ye, Lopatynskyi, L.F. Linnik, V.V. Tetyorkin, and A.G. Phedorov, Semiconductors 44, 544 (2010).
I.S. Virt, I.O. Rudyj, I.V. Kurilo, I.Y. Lopatynskyi, L.F. Linnik, V.V. Tetyorkin, P. Potera, and G. Luka, Semiconductors 47, 997 (2013).
S. Singh and S. Basu, Surf. Coat. Technol. 201, 952 (2006).
T. Itoh and N. Yamauchi, Appl. Surf. Sci. 253, 6196 (2007).
I.S. Virt, Y. Tur, I.O. Rudyi, I.Y. Lopatynskyi, M.S. Frugynskyi, I.V. Kurilo, E. Lusakowska, B.S. Witkowski, and G. Luka, J. Cryst. Growth 432, 19 (2015).
X. Sun, K. Gao, X. Pang, H. Yang, and A.A. Volinsky, Appl. Surf. Sci. 356, 978 (2015).
S. Prabahar, N. Suryanarayanan, K. Rajasekar, and S. Srikanth, Chalcogenide Lett. 6, 203 (2009).
J. Qiu, B. Weng, Z. Yuan, and Z. Shi, J. Appl. Phys. 113, 103102 (2013).
H.C. Casey Jr. and M.B. Panish, Heterostructure Lasers. Part B: Materials and Operating Characteristics (Academic Press, New York, 1978)
A. Bali, R. Chetty, R.C. Mallik, and A.I.P. Conf, Proc. 1591, 1118 (2014).
E. Wintersberger, N. Hrauda, D. Kriegner, M. Keplinger, G. Springholz, J. Stangl, G. Bauer, J. Oswald, T. Belytschko, C. Deiter, F. Bertram, and O.H. Seeck, Appl. Phys. Lett. 96, 131905 (2010).
W.D. Callister and D.G. Rethwisch, Materials Science and Engineering: An Introduction, 9th ed. (Hoboken: Wiley, 2014).
D.G. Stearns, P.B. Mirkarimi, and E. Spiller, Thin Solid Films 446, 37 (2004).
W.M. Tong and R.S. Williams, Annu. Rev. Phys. Chem. 45, 401 (1994).
W.-F. Li, Ch-M Fang, M. Dijkstra, and M.A. van Huis, J. Phys.: Condens. Matter 27, 355801 (2015).
W.H. Strehlow and E.L. Cook, J. Phys. Chem. Ref. Data 2, 163 (1973).
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Virt, I.S., Rudyi, I.O., Lopatynskyi, I.Y. et al. Growth Mechanisms and Structural Properties of Lead Chalcogenide Films Grown by Pulsed Laser Deposition. J. Electron. Mater. 46, 175–181 (2017). https://doi.org/10.1007/s11664-016-4903-9
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DOI: https://doi.org/10.1007/s11664-016-4903-9