Abstract
In this study, the p-SiC/i-Si/n-Si cell and the p-SiC/i-SiGe/n-Si cell deposited using plasma-enhanced chemical vapor deposition were cascaded for forming the tandem Si-based thin film solar cells to absorb the wide solar spectrum. To further improve the performances of the tandem Si-based thin film solar cells, a 5-nm-thick n +-microcrystalline-Si (n +-μc-Si) tunnel layer deposited using the laser-assisted plasma-enhanced chemical vapor deposition was inserted between the p-SiC/i-Si/n-Si cell and the p-SiC/i-SiGe/n-Si cell. Since both the plasma and the CO2 laser were simultaneously utilized to efficiently decompose the reactant and doping gases, the carrier concentration and the carrier mobility of the n +-μc-Si tunnel layer were significantly improved. The ohmic contact formed between the p-SiC layer and the n +-μc-Si tunnel layer with low resistance was beneficial to the generated current transportation and the carrier recombination rate. Therefore, the conversion efficiency of the tandem solar cells was promoted from 8.57% and 8.82% to 9.91% compared to that without tunnel layer and with 5-nm-thick n +-amorphous-Si tunnel layer.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
C.Y. Tseng, C.K. Lee, and C.T. Lee, Prog. Photovolt. Res. Appl. 19, 436 (2011).
D. Shahrjerdi, S.W. Bedell, C. Ebert, C. Bayram, B. Hekmatshoar, K. Fogel, P. Lauro, M. Gaynes, T. Gokmen, J.A. Ott, and D.K. Sadana, Appl. Phys. Lett. 100, 053901 (2012).
C.Y. Tseng and C.T. Lee, Appl. Phys. Lett. 101, 033902 (2012).
F. Dimroth, M. Grave, P. Beutel, U. Fiedeler, C. Karcher, T.N.D. Tibbits, E. Oliva, G. Siefer, M. Schachtner, A. Wekkeli, A.W. Bett, R. Krause, M. Piccin, N. Blanc, C. Drazek, E. Guiot, B. Ghyselen, T. Salvetat, A. Tauzin, T. Signamarcheix, A. Dobrich, T. Hannappel, and K. Schwarzburg, Prog. Photovolt. Res. Appl. 22, 277 (2014).
J.F. Wheeldon, C.E. Valdivia, A.W. Walker, G. Kolhatkar, A. Jaouad, A. Turala, B. Riel, D. Masson, N. Puetz, S. Fafard, R. Ares, V. Aimez, T.J. Hall, and K. Hinzer, Prog. Photovolt. Res. Appl. 19, 442 (2011).
M. Yamaguchi, T. Takamoto, and K. Araki, Sol. Energy Mater. Sol. Cells 90, 3068 (2006).
C.T. Lee, K.F. Lu, and C.Y. Tseng, Sol. Energy 114, 1 (2015).
C.K. Huang, H.H. Lin, J.T. Chen, K.W. Sun, and W.L. Chang, Sol. Energy Mater. Sol. Cells 95, 2540 (2011).
C.T. Lee and C.H. Lee, Org. Electron. 14, 2046 (2013).
X. Wang, X. Li, G. Tang, L. Zhao, W. Zhang, T. Jiu, and J. Fang, Org. Electron. 24, 205 (2015).
S.S. Hegedus, F. Kampass, and J. Xi, Appl. Phys. Lett. 67, 813 (1995).
N. Palit, A. Dasgupta, S. Ray, and P. Chatterjee, J. Appl. Phys. 88, 2853 (2000).
Y. Sakai, K. Fukuyama, M. Matsumura, Y. Nakato, and H. Tsubomura, J. Appl. Phys. 64, 394 (1988).
D.S. Shen, R.E.I. Schropp, H. Chatham, R.E. Hollingworth, P.K. Bhat, and J. Xi, Appl. Phys. Lett. 56, 1871 (1990).
C.T. Lee, Y.F. Chen, and C.H. Lin, Nanotechnology 20, 025702 (2009).
C.T. Lee, J.H. Cheng, and H.Y. Lee, Appl. Phys. Lett. 91, 091920 (2007).
W.B. Steward and H.H. Nielsen, Phys. Rev. 47, 828 (1935).
H.Y. Lee, Y.C. Lin, C.H. Chang, and C.Y. Tseng, Sol. Energy 107, 365 (2014).
S. Klein, T. Repmann, and T. Brammer, Sol. Energy 77, 893 (2004).
S.Q. Xiao, S. Xu, D.Y. Wei, S.Y. Huang, H.P. Zhou, and Y. Xu, J. Appl. Phys. 108, 113520 (2010).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Lee, CT., Lee, HY. & Chen, KH. n +-Microcrystalline-Silicon Tunnel Layer in Tandem Si-Based Thin Film Solar Cells. J. Electron. Mater. 45, 4838–4842 (2016). https://doi.org/10.1007/s11664-016-4691-2
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-016-4691-2