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Understanding Electrical Conduction States in WO3 Thin Films Applied for Resistive Random-Access Memory

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Abstract

The electrical conduction and associated resistance switching mechanism of top electrode/WO3/bottom electrode devices [top electrode (TE): Ag, Ti; bottom electrode (BE): Pt, fluorine-doped tin oxide] have been investigated. The direction of switching and switching ability depended on both the top and bottom electrode material. Multiple electrical conduction mechanisms control the leakage current of such switching devices, including trap-controlled space-charge, ballistic, Ohmic, and Fowler–Nordheim tunneling effects. The transition between electrical conduction states is also linked to the switching (SET–RESET) process. This is the first report of ballistic conduction in research into resistive random-access memory. The associated resistive switching mechanisms are also discussed.

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Authors and Affiliations

  1. Faculty of Materials Science, University of Science, Vietnam National University, Ho Chi Minh City, Viet Nam

    Thi Kieu Hanh Ta, Kim Ngoc Pham, Thi Bang Tam Dao & Bach Thang Phan

  2. Vietnam Academy of Science and Technology, Ha Noi, Viet Nam

    Dai Lam Tran

  3. Laboratory of Advanced Materials, University of Science, Vietnam National University, Ho Chi Minh City, Viet Nam

    Bach Thang Phan

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  1. Thi Kieu Hanh Ta
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  2. Kim Ngoc Pham
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  3. Thi Bang Tam Dao
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  4. Dai Lam Tran
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  5. Bach Thang Phan
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Correspondence to Bach Thang Phan.

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Ta, T.K.H., Pham, K. ., Dao, T.B. . et al. Understanding Electrical Conduction States in WO3 Thin Films Applied for Resistive Random-Access Memory. J. Electron. Mater. 45, 2423–2432 (2016). https://doi.org/10.1007/s11664-016-4361-4

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  • DOI: https://doi.org/10.1007/s11664-016-4361-4

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