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Consistency in Al/CuPc/n-Si Heterojunction Diode Parameters Extracted Using Different Techniques

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Abstract

This paper reports fabrication and characterization of an Al/CuPc/n-Si heterojunction diode. The heterojunction was fabricated by depositing the active organic semiconducting material copper phthalocyanine (CuPc) on the n-Si substrate using the thermal vacuum evaporation technique. Electrical characterization of the fabricated heterojunction was carried out at ambient conditions. Various diode parameters, such as the ideality factor (n), barrier height (\(\Phi_{\rm{b}}\)), and series resistance (R s), were extracted from the current–voltage (I–V) characteristic curve. These parameters are consistent with techniques used by Cheung, Norde and Hernandez et al. Furthermore these parameters are consistent with capacitance-voltage (C–V) characterization method. The conduction mechanism at the interface of CuPc and n-Si was also investigated. The surface morphology of the CuPc film was studied using atomic force microscopy and scanning electron microscopy. The optical bandgap of the CuPc film was calculated from the absorption spectrum using Tauc’s law.

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Acknowledgements

The authors would like to thank Prof. Dr. Khasan S. Karimov, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology (GIKI), Topi, Swabi, Pakistan and Mr. Qayum, Department of Physics, COMSATS Institute of Information Technology, Islamabad, Pakistan for providing experimental facilities. We are grateful to the Higher Education Commission Pakistan for providing financial support.

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Authors and Affiliations

  1. Department of Physics, Abdul Wali Khan University, Mardan, 23200, Pakistan

    Irfan Ullah & Fazal Wahab

  2. Department of Physics, University of Peshawar, Peshawar, 25000, Pakistan

    Mutabar Shah & Majid Khan

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  1. Irfan Ullah
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  2. Mutabar Shah
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  3. Majid Khan
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  4. Fazal Wahab
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Correspondence to Irfan Ullah.

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Ullah, I., Shah, M., Khan, M. et al. Consistency in Al/CuPc/n-Si Heterojunction Diode Parameters Extracted Using Different Techniques. J. Electron. Mater. 45, 1175–1183 (2016). https://doi.org/10.1007/s11664-015-4163-0

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  • DOI: https://doi.org/10.1007/s11664-015-4163-0

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