Abstract
A simple, efficient and rapid brush-printing method has been developed for preparation of n-type Bi2Te2.7Se0.3 films approximately 100–150 μm thick. X-ray diffraction, scanning electron microscopy, electron probe microanalysis, and four-point probe measurements were used to characterize the crystal structure, composition, microstructure, and electrical properties of the films. The results showed that all the n-type Bi2Te2.7Se0.3 thick films were composed of single-phase Bi2Te2.7Se0.3; the grains in the films were randomly distributed in the low-temperature-annealed samples and predominantly oriented along the (00l) plane in samples annealed at temperatures >673 K. σ and the absolute value of α first increased substantially with increasing the annealing temperature in the range 573–673 K then decreased when the annealing temperature was increased further. The dependence of σ and α on annealing temperature may be reasonably explained on the basis of the change in the microstructure induced by annealing. The performance of a prototype cooling device containing n-type Bi2Te2.7Se0.3 thick films was evaluated for temperature differences produced by use of different DC currents.
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This work was supported by the National Basic Research Program of China (973-program) under Project No. 2013CB632505 and the National Natural Science Foundation of China (No. 11274248).
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Liu, X., Zhao, Wy., Zhou, Hy. et al. Fabrication and Optimization of Brush-Printed n-type Bi2Te3 Thick Films for Thermoelectric Cooling Devices. J. Electron. Mater. 45, 1328–1335 (2016). https://doi.org/10.1007/s11664-015-4027-7
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DOI: https://doi.org/10.1007/s11664-015-4027-7