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Effect of Sn Doping on the Thermoelectric Properties of n-type Bi2(Te,Se)3 Alloys

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Abstract

In the present work, 0.01–0.05wt.% Sn-doped Bi2(Te0.9Se0.1)3 alloys were prepared by mechanical deformation followed by hot pressing, and their thermoelectric properties were studied. We observed that the Sn element is a very effective dopant as an acceptor to control the carrier concentration in the n-type Bi2(Te0.9Se0.1)3 alloys to optimize their thermoelectric property. The n-type carrier concentration can be controlled from 4.2 × 1019/cm3 to 2.4 × 1019/cm3 by 0.05wt.% Sn-doping. While the Seebeck coefficient and the electrical resistivity are both increased with doping, the power factor remains the same. Therefore, we found that the thermoelectric figure-of-merit becomes maximized at 0.75 when the thermal conductivity has a minimum value for the 0.03wt.% Sn-doped sample.

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Acknowledgement

J.-U.L. and D.-H.L. contributed equally to this work. This research was supported by the Technology Innovation Program (10046673) funded by the Ministry of Trade, Industry & Energy (MI, Korea), and KIST-UNIST partnership program through 2V03290.

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Authors and Affiliations

  1. Future Convergence Research Division, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea

    Jae-Uk Lee, Deuk-Hee Lee, Beomjin Kwon, Dow-Bin Hyun, Seung-Hyub Baek & Jin-Sang Kim

  2. Department of Nanomaterials Science and Technology, Korea University of Science and Technology, Daejeon, 305-333, Republic of Korea

    Seung-Hyub Baek

  3. Department of Materials Science and Engineering, Korea University, Seoul, 136-713, Republic of Korea

    Jae-Uk Lee & Sahn Nahm

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  1. Jae-Uk Lee
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  2. Deuk-Hee Lee
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Correspondence to Seung-Hyub Baek or Jin-Sang Kim.

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Lee, JU., Lee, DH., Kwon, B. et al. Effect of Sn Doping on the Thermoelectric Properties of n-type Bi2(Te,Se)3 Alloys. J. Electron. Mater. 44, 1926–1930 (2015). https://doi.org/10.1007/s11664-014-3598-z

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  • DOI: https://doi.org/10.1007/s11664-014-3598-z

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