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Fe-Doped TiO2 Thin Films for CO Gas Sensing

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Abstract

Fe-doped TiO2 thin films were prepared by the sol–gel technique on silicon substrate. The thin films were evaluated for detection of carbon monoxide (CO) gas at room temperature. The TiO2 films were characterized by x-ray diffraction (XRD) analysis, field-emission scanning electron microscopy, and ultraviolet–visible (UV) spectroscopy. The characterization revealed that, as the doping concentration was increased, the grain size decreased. XRD patterns revealed the phase transition from rutile to anatase with addition of different percentages (weight/volume) of Fe. The bandgap determined from UV spectroscopy was found to decrease with increasing Fe doping concentration. Fe doping was observed to have a significant effect on the resistivity of the doped TiO2 thin films. The gas sensing behavior of the films was studied by exposure to different concentrations of CO gas with measurement of the electrical resistance. It was observed that Fe-doped (7% weight/volume) TiO2 exhibited high sensitivity and good response/recovery on exposure to CO gas in the concentration range from 100 ppm to 900 ppm in Ar.

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Authors and Affiliations

  1. Department of Electronics & Communication Engineering, National Institute of Technology (NIT), Kurukshetra, Kurukshetra, India

    Mukesh Kumar & Anil Kumar Gupta

  2. Department of Electronic Science, Kurukshetra University, Kurukshetra, India

    Dinesh Kumar

Authors
  1. Mukesh Kumar
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  2. Dinesh Kumar
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  3. Anil Kumar Gupta
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Correspondence to Mukesh Kumar.

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Kumar, M., Kumar, D. & Gupta, A.K. Fe-Doped TiO2 Thin Films for CO Gas Sensing. J. Electron. Mater. 44, 152–157 (2015). https://doi.org/10.1007/s11664-014-3477-7

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  • DOI: https://doi.org/10.1007/s11664-014-3477-7

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