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A Comparative Study on SiC-B4C-Si Cermet Prepared by Pressureless Sintering and Spark Plasma Sintering Methods

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Abstract

Silicon carbide (SiC)–boron carbide (B4C) based cermets were doped with 5, 10, and 20 wt pct Silicon (Si) and their sinterability and properties were investigated for conventional sintering at 2223 K (1950 °C) and spark plasma sintering (SPS) at 1623 K (1350 °C). An average particle size of ~3 µm was obtained after 10 hours of milling. There is an enhancement of Vickers microhardness in the 10 wt pct Si sample from 18.10 in conventional sintering to 27.80 GPa for SPS. The relative density, microhardness, and indentation fracture toughness of the composition SiC60(B4C)30Si10 fabricated by SPS are 98 pct, 27.80 GPa, and 3.8 MPa m1/2, respectively. The novelty of the present study is to tailor the wettability and ductility of the cermet by addition of Si into the SiC-B4C matrix. Better densification with improved properties is achieved for cermets consolidated by SPS at lower temperatures than conventional sintering.

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Acknowledgments

The authors are grateful to the National Institute of Technology Rourkela, India for providing necessary infrastructural facilities. The authors are also grateful to the National Metallurgical Laboratory, Jamshedpur for providing facilities for high-temperature conventional sintering. The authors are thankful to Professor V. Vamshi Krishna Reddy (Department of Humanities and Social Sciences, NIT Rourkela, India) for language correction of the manuscript.

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Authors and Affiliations

  1. Department of Metallurgical and Materials Engineering, National Institute of Technology, Rourkela, 769008, India

    P. Sahani (Research Scholar), S. K. Karak (Assistant Professor) & D. Chaira (Assistant Professor)

  2. Dalmia Institute of Scientific & Industrial Research, Rajgangpur, Odisha, 770017, India

    B. Mishra (Dy. Director)

  3. International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Balapur P.O., Hyderabad, Andhra Pradesh, 500005, India

    D. Chakravarty (Scientist D)

Authors
  1. P. Sahani
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  2. S. K. Karak
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  3. B. Mishra
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  4. D. Chakravarty
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  5. D. Chaira
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Corresponding authors

Correspondence to D. Chakravarty or D. Chaira.

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Manuscript submitted January 6, 2015.

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Sahani, P., Karak, S.K., Mishra, B. et al. A Comparative Study on SiC-B4C-Si Cermet Prepared by Pressureless Sintering and Spark Plasma Sintering Methods. Metall Mater Trans A 47, 3065–3076 (2016). https://doi.org/10.1007/s11661-016-3401-2

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